P

Inventor

VOSS STEPHAN

DE38 patents
⚠️ This page may combine multiple inventors who share the name “VOSS STEPHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

19 patents
US9917181B2Mar 13, 2018

Bipolar transistor with superjunction structure

INFINEON TECHNOLOGIES AG3 citations73
US12211703B2Jan 28, 2025

Methods for forming a semiconductor device having a second semiconductor layer on a first semiconductor layer

INFINEON TECHNOLOGIES AG0 citations62
US11742215B2Aug 29, 2023

Methods for forming a semiconductor device

INFINEON TECHNOLOGIES AG1 citations62
US11515264B2Nov 29, 2022

Method for processing a semiconductor wafer, semiconductor composite structure and support structure for semiconductor wafer

INFINEON TECHNOLOGIES AG0 citations62
US9041120B2May 26, 2015

Power MOS transistor with integrated gate-resistor

INFINEON TECHNOLOGIES AG3 citations61
US12046509B2Jul 23, 2024

Semiconductor device protection using an anti-reflective layer

INFINEON TECHNOLOGIES AG0 citations58
US10249746B2Apr 2, 2019

Bipolar transistor with superjunction structure

INFINEON TECHNOLOGIES AG0 citations52
US10177230B2Jan 8, 2019

Semiconductor device including at least one type of deep-level dopant

INFINEON TECHNOLOGIES AG0 citations52
US10038052B2Jul 31, 2018

Semiconductor device with channelstopper and method for producing the same

INFINEON TECHNOLOGIES AG1 citations52
US9899377B2Feb 20, 2018

Insulated gate semiconductor device with soft switching behavior

INFINEON TECHNOLOGIES AG1 citations52
US9809877B2Nov 7, 2017

Ion implantation apparatus with ion beam directing unit

INFINEON TECHNOLOGIES AG0 citations52
US9390883B2Jul 12, 2016

Implantation apparatus with ion beam directing unit, semiconductor device and method of manufacturing

INFINEON TECHNOLOGIES AG1 citations52
US9224806B2Dec 29, 2015

Edge termination structure with trench isolation regions

INFINEON TECHNOLOGIES AG1 citations52
US11081544B2Aug 3, 2021

Method of manufacturing a semiconductor device comprising first and second field stop zone portions

INFINEON TECHNOLOGIES AG0 citations51
US9859272B2Jan 2, 2018

Semiconductor device with a reduced band gap zone

INFINEON TECHNOLOGIES AG1 citations51
US9704712B1Jul 11, 2017

Method of making a semiconductor device formed by thermal annealing

INFINEON TECHNOLOGIES AG1 citations51
US9754787B2Sep 5, 2017

Method for treating a semiconductor wafer

INFINEON TECHNOLOGIES AG1 citations50
US9548370B2Jan 17, 2017

Transistor device with integrated gate-resistor

INFINEON TECHNOLOGIES AG0 citations50
US10153339B2Dec 11, 2018

Semiconductor device and method for forming a semiconductor device

INFINEON TECHNOLOGIES AG0 citations40

INFINEON TECHNOLOGIES AUSTRIA AG

8 patents

KONINKLIJKE PHILIPS NV

4 patents

INFINEON TECHNOLOGIES AUSTRIA

3 patents

SCHULZE HANS-JOACHIM

1 patent

SIEMENS ENERGY GLOBAL GMBH & CO KG

1 patent

VOSS STEPHAN

1 patent

SIEMENS AG

1 patent