Inventor

NAIK VINAYAK BHARAT

SG27 patents

⚠️ This page may combine multiple inventors who share the name “NAIK VINAYAK BHARAT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NAIK VINAYAK BHARAT

GLOBALFOUNDRIES SG PTE LTD

Magnetic memory cells with high write current and read stability

Magnetic memory cells with low switching current density

MRAM with metal-insulator-transition material

Integrated circuits with magnetic tunnel junctions and methods for producing the same

High sensing margin magnetic resistive memory device in which a memory cell read and write select transistors to provide different read and write paths

Magnetic memory cells with fast read/write speed

Storage layer for magnetic memory with high thermal stability

Magnetic memory with tunneling magnetoresistance enhanced spacer layer

High thermal budget magnetic memory

Voltage-tunable magnetic devices for communication applications

Voltage controlled spin switches for low power applications

Storage layer for magnetic memory with high thermal stability

Tunnel magneto-resistive (TMR) sensor with perpendicular magnetic tunneling junction (p-MTJ) structures

Magnetic field sensor using different magnetic tunneling junction (MTJ) structures

Laser-detection devices including a voltage-controlled magnetic-tunneling-junction layer stack

Magnetic shielding of semiconductor devices

Composite spacer layer for magnetoresistive memory

Magnetic memory with tunneling magnetoresistance enhanced spacer layer

Magnetic field sensor

Magnetic field sensor using magnetic tunneling junction (MTJ) structures and passive resistors

Integrated circuits with magnetic tunnel junctions and methods for fabricating the same

Random number generators including magnetic-tunnel-junction layer stacks

Spiking neural network hardware based on magnetic-tunnel-junction layer stacks

High energy barrier perpendicular magnetic tunnel junction element with reduced temperature sensitivity

GLOBALFOUNDRIES US INC

Memory cell having a free ferromagnetic material layer with a curved, non-planar surface and methods of making such memory cells

MRAM device and methods of making such an MRAM device

Magnetic field sensor with MTJ elements arranged in series