Inventor

SHIN HEONJONG

KR32 patents

⚠️ This page may combine multiple inventors who share the name “SHIN HEONJONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHIN HEONJONG

SAMSUNG ELECTRONICS CO LTD

Semiconductor wafer with improved step coverage along scribe lines

Semiconductor device including a semiconductor extension layer between active regions

Semiconductor device

Multi-bridge channel field effect transistor with reduced gate-channel leakage current

Semicondcutor device including a semiconductor extension layer between active regions

Semiconductor device

Semiconductor device

Semiconductor device having silicides and methods of manufacturing the same

Semiconductor devices having isolation insulating layers and methods of manufacturing the same

Semiconductor devices having isolation insulating layers and methods of manufacturing the same

Semiconductor devices inlcluding a fin field effect transistor

Semiconductor device including high voltage and low voltage MOS devices

Semiconductor device

Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

Semiconductor device

Semiconductor device having silicides and methods of manufacturing the same

Method of fabricating semiconductor devices including a fin field effect transistor

Active regions via contacts having various shaped segments off-set from gate via contact

Semiconductor device

Semiconductor device having a source/drain contact plug with an upwardly protruding portion

Method of manufacturing a semiconductor device having a source/drain contact plug with a recessed portion using a mask pattern layer

Semiconductor device

Semiconductor device

Semiconductor device

Semiconductor device

Transistor devices having buried interconnection line below source/drain regions and one or more protective layers covering lower surfaces of gate structures

SHIN HEONJONG

Semiconductor devices having isolation insulating layers and methods of manufacturing the same

YEO KYOUNG HWAN

Semiconductor devices and methods of manufacturing the same

HA SEUNGSEOK

Semiconductor devices including a gate core and a fin active core and methods of fabricating the same

PARK BYUNGJAE

Semiconductor devices having a spacer on an isolation region

CHANG CHANSAM

Method of fabricating a semiconductor device including high voltage and low voltage MOS devices