Inventor
HARADA HIROFUMI
JP48 patents
⚠️ This page may combine multiple inventors who share the name “HARADA HIROFUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEIKO INSTR INC
24 patentsUS6624469B1Sep 23, 2003
Vertical MOS transistor having body region formed by inclined ion implantation
SEIKO INSTR INC61 citations96
US6844578B2Jan 18, 2005
Semiconductor integrated circuit device and manufacturing method therefor
SEIKO INSTR INC42 citations93
US6525376B1Feb 25, 2003
High withstand voltage insulated gate N-channel field effect transistor
SEIKO INSTR INC17 citations93
US6511885B2Jan 28, 2003
Vertical MOS transistor and method of manufacturing the same
SEIKO INSTR INC30 citations93
US6495884B2Dec 17, 2002
Vertical MOS transistor
SEIKO INSTR INC23 citations93
US6426258B1Jul 30, 2002
Method of manufacturing a semiconductor integrated circuit device
SEIKO INSTR INC24 citations93
US6013940AJan 11, 2000
Poly-crystalline silicon film ladder resistor
SEIKO INSTR INC32 citations93
US6005275ADec 21, 1999
Semiconductor acceleration sensor with cantilever
SEIKO INSTR INC30 citations93
US6710402B2Mar 23, 2004
Vertical MOS transistor and a method of manufacturing the same
SEIKO INSTR INC52 citations92
US6570229B1May 27, 2003
Semiconductor device
SEIKO INSTR INC31 citations92
US6236084B1May 22, 2001
Semiconductor integrated circuit device having double diffusion insulated gate field effect transistor
SEIKO INSTR INC18 citations84
US7034359B2Apr 25, 2006
Vertical MOS transistor
SEIKO INSTR INC10 citations74
US9142543B2Sep 22, 2015
Semiconductor device having an ESD protection circuit
SEIKO INSTR INC6 citations69
US7602044B2Oct 13, 2009
Semiconductor device having polycrystalline silicon resistors
SEIKO INSTR INC2 citations63
US7485933B2Feb 3, 2009
Semiconductor integrated circuit device having polycrystalline silicon resistor circuit
SEIKO INSTR INC3 citations63
US7282768B2Oct 16, 2007
MOS field-effect transistor
SEIKO INSTR INC2 citations63
US6720633B2Apr 13, 2004
High withstand voltage insulated gate N-channel field effect transistor
SEIKO INSTR INC3 citations63
US9136145B2Sep 15, 2015
Semiconductor integrated circuit device
SEIKO INSTR INC0 citations52
US6921949B2Jul 26, 2005
Semiconductor integrated circuit device
SEIKO INSTR INC1 citations52
US9791873B2Oct 17, 2017
Semiconductor integrated circuit device and method of regulating output voltage thereof
SEIKO INSTR INC0 citations42
US9461038B2Oct 4, 2016
Semiconductor device with resistance circuit
SEIKO INSTR INC0 citations42
US7341896B2Mar 11, 2008
Method of manufacturing a vertical MOS transistor
SEIKO INSTR INC0 citations42
US9437669B2Sep 6, 2016
Semiconductor device
SEIKO INSTR INC0 citations41
US7750411B2Jul 6, 2010
Semiconductor integrated circuit device
SEIKO INSTR INC0 citations41
SII SEMICONDUCTOR CORP
8 patentsUS10276672B2Apr 30, 2019
Vertical semiconductor device having a trench gate a base contact region
SII SEMICONDUCTOR CORP1 citations60
US10014253B2Jul 3, 2018
Method of manufacturing semiconductor integrated circuit device
SII SEMICONDUCTOR CORP1 citations52
US9972625B2May 15, 2018
Method of manufacturing semiconductor integrated circuit device
SII SEMICONDUCTOR CORP0 citations52
US9893073B2Feb 13, 2018
Semiconductor nonvolatile memory element
SII SEMICONDUCTOR CORP1 citations52
US9831176B2Nov 28, 2017
Semiconductor integrated circuit device and method of manufacturing the same
SII SEMICONDUCTOR CORP0 citations52
US9698147B2Jul 4, 2017
Semiconductor integrated circuit device having low and high withstanding-voltage MOS transistors
SII SEMICONDUCTOR CORP0 citations52
US9613970B2Apr 4, 2017
Semiconductor nonvolatile memory element
SII SEMICONDUCTOR CORP1 citations52
US10014294B2Jul 3, 2018
Semiconductor integrated circuit device having enhancement type NMOS and depression type MOS with N-type channel impurity region and P-type impurity layer under N-type channel impurity region
SII SEMICONDUCTOR CORP0 citations40
ABLIC INC
4 patentsUS11227913B2Jan 18, 2022
Semiconductor device and method of manufacturing the same
ABLIC INC0 citations60
US10756169B2Aug 25, 2020
Semiconductor device and method of manufacturing the same
ABLIC INC0 citations49
US10593769B2Mar 17, 2020
Method for manufacturing a vertical semiconductor device
ABLIC INC0 citations49
US10347620B2Jul 9, 2019
Semiconductor device
ABLIC INC0 citations33
TOSHIBA TEC KK
3 patentsUS7228339B2Jun 5, 2007
Information storage output system and information storage output service
TOSHIBA TEC KK19 citations81
US7100158B2Aug 29, 2006
Program management apparatus, program management system, and program management method
TOSHIBA TEC KK19 citations79
US6993526B2Jan 31, 2006
Electronic catalog system, catalog data printing method, server, and computer readable recording media recording program used in server
TOSHIBA TEC KK4 citations57