Inventor
HASHITANI MASAYUKI
JP12 patents
⚠️ This page may combine multiple inventors who share the name “HASHITANI MASAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEIKO INSTR INC
6 patentsUS9552009B2Jan 24, 2017
Reference voltage generator having diode-connected depletion MOS transistors with same temperature coefficient
SEIKO INSTR INC2 citations71
US8053820B2Nov 8, 2011
Semiconductor device and method of manufacturing the same
SEIKO INSTR INC6 citations71
US9213415B2Dec 15, 2015
Reference voltage generator
SEIKO INSTR INC2 citations62
US9804628B2Oct 31, 2017
Reference voltage generator
SEIKO INSTR INC1 citations51
US9276065B2Mar 1, 2016
Semiconductor device and method of manufacturing the same
SEIKO INSTR INC0 citations49
US8847308B2Sep 30, 2014
Semiconductor device having a trench structure
SEIKO INSTR INC0 citations39
HASHITANI MASAYUKI
4 patentsUS8236648B2Aug 7, 2012
Trench MOS transistor and method of manufacturing the same
HASHITANI MASAYUKI8 citations80
US8716142B2May 6, 2014
Semiconductor device and method of manufacturing the same
HASHITANI MASAYUKI1 citations48
US8598026B2Dec 3, 2013
Semiconductor device and method of manufacturing the same
HASHITANI MASAYUKI0 citations48
US8643093B2Feb 4, 2014
Semiconductor device and method of manufacturing the same
HASHITANI MASAYUKI0 citations37
SII SEMICONDUCTOR CORP
2 patentsUS10014294B2Jul 3, 2018
Semiconductor integrated circuit device having enhancement type NMOS and depression type MOS with N-type channel impurity region and P-type impurity layer under N-type channel impurity region
SII SEMICONDUCTOR CORP0 citations40
US9524961B2Dec 20, 2016
Semiconductor device
SII SEMICONDUCTOR CORP0 citations40