Inventor

HE WANXUN

SG22 patents

⚠️ This page may combine multiple inventors who share the name “HE WANXUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HE WANXUN

UNITED MICROELECTRONICS CORP

Dual channel transistor

Vertical channel oxide semiconductor field effect transistor and method for fabricating the same

Semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Static random access memory device and forming method thereof

Semiconductor structure

Static random access memory having insulating layer with different thicknesses

Method for fabricating static random access memory having insulating layer with different thicknesses

Semiconductor device and method for fabricating the same

Method for fabricating a semiconductor device

Vertical channel oxide semiconductor field effect transistor and method for fabricating the same

Channel structure and manufacturing method thereof

Radiofrequency switch device and manufacturing method thereof

Static random access memory unit cell

GLOBALFOUNDRIES INC

Product comprised of FinFET devices with single diffusion break isolation structures, and methods of making such a product

Product comprised of FinFET devices with single diffusion break isolation structures

Methods for forming FinFETs with reduced series resistance

Non-planar semiconductor device with multiple-head epitaxial structure on fin

Mixed N/P-type fin semiconductor structure with epitaxial materials having increased surface area through multiple epitaxial heads

Method for increasing a surface area of epitaxial structures in a mixed N/P type fin semiconductor structure by forming multiple epitaxial heads

GLOBALFOUNDARIES INC

FinFET fabrication method