Inventor

YIP LI JUIN

AT30 patents

⚠️ This page may combine multiple inventors who share the name “YIP LI JUIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YIP LI JUIN

INFINEON TECHNOLOGIES AUSTRIA AG

Power MOSFET with seperate gate and field plate trenches

Semiconductor device with charge compensation region underneath gate trench

Semiconductor device with needle-shaped field plate structures

Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region

Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structures

Power semiconductor device having different gate crossings, and method for manufacturing thereof

Semiconductor device having an alignment layer with mask pits

Semiconductor transistor device and method of manufacturing the same

Semiconductor device and method of manufacturing a semiconductor device using an alignment layer

Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof

Semiconductor transistor device having a titled body contact area and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device having termination trench

Methods of manufacturing a power MOSFET

Semiconductor devices and methods for forming semiconductor devices

Method of manufacturing a semiconductor device with a metal-filled groove in a polysilicon gate electrode

Semiconductor device having termination trench

Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions

Semiconductor device with metal-filled groove in polysilicon gate electrode

Semiconductor device

Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof

Reduced gate charge field-effect transistor

Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trench

Reduced gate charge field-effect transistor

Semiconductor device having a trench with different electrode materials

Insulating block in a semiconductor trench

Semiconductor transistor and method for forming the semiconductor transistor

Semiconductor device with field electrode and contact structure

INFINEON TECHNOLOGIES AUSTRIA

Semiconductor device with metal-filled groove in polysilicon gate electrode

Method and contact structure for coupling a doped body region to a trench electrode of a semiconductor device