Inventor

MUTOU AKIYOSHI

JP2 patents

Patents

2 patents

US6774409B2Aug 10, 2004

Semiconductor device with NMOS including Si:C channel region and/or PMOS including SiGe channel region

SHARP KK31 citations89

US7172934B2Feb 6, 2007

Method of manufacturing a semiconductor device with a silicon-germanium gate electrode

SHARP KK4 citations54