Inventor
CHUN KWAN-YOUNG
KR20 patents
Patents
20 patentsUS10699998B2Jun 30, 2020
Semiconductor devices with insulated source/drain jumper structures
SAMSUNG ELECTRONICS CO LTD5 citations82
US10361198B2Jul 23, 2019
Integrated circuit devices and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD11 citations82
US9735157B1Aug 15, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD15 citations82
US11069818B2Jul 20, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations73
US10304819B2May 28, 2019
Semiconductor device with multigate transistor structure
SAMSUNG ELECTRONICS CO LTD2 citations73
US10177093B2Jan 8, 2019
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US11461521B2Oct 4, 2022
Integrated circuit including standard cell and method of fabricating the integrated circuit
SAMSUNG ELECTRONICS CO LTD2 citations72
US10573634B2Feb 25, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US10546855B2Jan 28, 2020
Integrated circuit (IC) devices including cross gate contacts
SAMSUNG ELECTRONICS CO LTD3 citations72
US10957765B2Mar 23, 2021
Semiconductor devices having power rails
SAMSUNG ELECTRONICS CO LTD6 citations71
US10903213B2Jan 26, 2021
Integrated circuit devices
SAMSUNG ELECTRONICS CO LTD4 citations71
US10886227B2Jan 5, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations70
US12274085B2Apr 8, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11935835B2Mar 19, 2024
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11868691B2Jan 9, 2024
Integrated circuit including standard cell and method of fabricating the integrated circuit
SAMSUNG ELECTRONICS CO LTD0 citations62
US11205645B2Dec 21, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12598982B2Apr 7, 2026
Semiconductor devices with insulated source/drain jumper structures
SAMSUNG ELECTRONICS CO LTD0 citations61
US11398425B2Jul 26, 2022
Semiconductor devices with insulated source/drain jumper structures
SAMSUNG ELECTRONICS CO LTD0 citations61
US12532519B2Jan 20, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12506081B2Dec 23, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations46