Inventor

RUSSO UGO

US42 patents

⚠️ This page may combine multiple inventors who share the name “RUSSO UGO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RUSSO UGO

MICRON TECHNOLOGY INC

Void formation in charge trap structures

Memory cells, integrated devices, and methods of forming memory cells

Void formation in charge trap structures

Memory cells having a plurality of resistance variable materials

Adjustable NAND write performance

Partial block handling in a non-volatile memory device

Adjustment of code rate as function of memory endurance state metric

Void formation in charge trap structures

Assemblies comprising memory cells and select gates

Methods of forming phase change memory apparatuses

Phase change memory apparatuses

Modified read counter incrementing scheme in a memory sub-system

Intervallic dynamic start voltage and program verify sampling in a memory sub-system

Adjustment of code rate as function of memory endurance state metric

Memory cells having a plurality of resistance variable materials

Assemblies comprising memory cells and select gates; and methods of forming assemblies

Partial block handling in a non-volatile memory device

Charge loss mitigation throughout memory device lifecycle by proactive window shift

Assemblies comprising memory cells and select gates; and methods of forming assemblies

Microelectronic and semiconductor devices with a tunneling structure free of high-γ material by a select gate structure, and related methods

Apparatus and methods for determining data states of memory cells

Electronic apparatus with an oxide-only tunneling structure by a select gate tier, and related methods

Assemblies comprising memory cells and select gates; and methods of forming assemblies

Modified read counter incrementing scheme in a memory sub-system

Memory cells, integrated devices, and methods of forming memory cells

Intervallic dynamic start voltage and program verify sampling in a memory sub-system

Adjustable NAND write performance

Selectively programming retired wordlines of a memory device

Programming selective word lines during an erase operation in a memory device

Methods of operating memory devices and apparatuses

Memory cells having a plurality of resistance variable materials

Memory cells having a plurality of resistance variable materials

Methods for determining data states of memory cells

Media management scanning with unified criteria to alleviate fast and latent read disturb

Transient and stable state read operations of a memory device

RUSSO UGO

Memory cells having a plurality of resistance variable materials

Memory cells having a plurality of heaters

INTEL CORP

Phase-change memory cell implant for dummy array leakage reduction

Phase-change memory cell implant for dummy array leakage reduction

REDAELLI ANDREA

Memory cells and integrated devices

LODESTAR LICENSING GROUP LLC

Microelectronic devices with tunneling structures having partial-height high-κ material regions

MICRON TECHNOLGY INC

Charge loss mitigation throughout memory device lifecycle by proactive window shift