P

Inventor

CHOI MIN-HEE

KR45 patents
⚠️ This page may combine multiple inventors who share the name “CHOI MIN-HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

24 patents
US10297601B2May 21, 2019

Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD19 citations94
US11145720B2Oct 12, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations84
US10672764B2Jun 2, 2020

Integrated circuit semiconductor devices including a metal oxide semiconductor (MOS) transistor

SAMSUNG ELECTRONICS CO LTD8 citations83
US11862679B2Jan 2, 2024

Semiconductor device having increased contact area between a source/drain pattern and an active contact

SAMSUNG ELECTRONICS CO LTD2 citations72
US11728434B2Aug 15, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations72
US11302779B2Apr 12, 2022

Semiconductor device having increased contact area between a source/drain pattern and an active contact

SAMSUNG ELECTRONICS CO LTD5 citations72
US10896964B2Jan 19, 2021

Semiconductor devices having variously-shaped source/drain patterns

SAMSUNG ELECTRONICS CO LTD4 citations72
US10784379B2Sep 22, 2020

Semiconductor device including a shared semiconductor pattern having faceted sidewalls and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US8648408B2Feb 11, 2014

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations63
US12581634B2Mar 17, 2026

Semiconductor devices incorporating semiconductor layer configurations and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11942528B2Mar 26, 2024

Semiconductor devices having variously-shaped source/drain patterns

SAMSUNG ELECTRONICS CO LTD0 citations62
US11735631B2Aug 22, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11688781B2Jun 27, 2023

Semiconductor devices having variously-shaped source/drain patterns

SAMSUNG ELECTRONICS CO LTD0 citations62
US11469237B2Oct 11, 2022

Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12142690B2Nov 12, 2024

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations61
US12027586B2Jul 2, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations61
US11942551B2Mar 26, 2024

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations61
US11569389B2Jan 31, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations61
US11508751B2Nov 22, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations61
US11133421B2Sep 28, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations61
US10930668B2Feb 23, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations61
US12289908B2Apr 29, 2025

Semiconductor device having multi-bridge channel field-effect transistor including source/drain pattern with a plurality of semiconductor patterns

SAMSUNG ELECTRONICS CO LTD0 citations60
US12021131B2Jun 25, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations60
US10644106B2May 5, 2020

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51

SAMSUNG DISPLAY CO LTD

16 patents

UNIV EWHA IND COLLABORATION

1 patent

FACESHOP KOREA CO LTD

1 patent

NAVER CORP

1 patent

KOREA ELECTRIC POWER CORP

1 patent

NAVER BUSINESS PLATFORM CORP

1 patent