Inventor
WEBER HANS
DE139 patents
⚠️ This page may combine multiple inventors who share the name “WEBER HANS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AUSTRIA AG
11 patentsUS9653540B2May 16, 2017
Semiconductor wafer and method of manufacturing semiconductor devices in a semiconductor wafer
INFINEON TECHNOLOGIES AUSTRIA AG5 citations84
US11323099B2May 3, 2022
Electronic circuit with a transistor device and a biasing circuit
INFINEON TECHNOLOGIES AUSTRIA AG4 citations73
US10074715B2Sep 11, 2018
Semiconductor wafer, implantation apparatus for implanting protons and method for forming a semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG2 citations73
US11211483B2Dec 28, 2021
Method for forming an insulation layer in a semiconductor body and transistor device
INFINEON TECHNOLOGIES AUSTRIA AG4 citations72
US10923432B2Feb 16, 2021
Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark
INFINEON TECHNOLOGIES AUSTRIA AG1 citations72
US10811529B2Oct 20, 2020
Transistor device with gate resistor
INFINEON TECHNOLOGIES AUSTRIA AG5 citations72
US10679855B2Jun 9, 2020
Method for producing a superjunction device
INFINEON TECHNOLOGIES AUSTRIA AG1 citations72
US10553681B2Feb 4, 2020
Forming a superjunction transistor device
INFINEON TECHNOLOGIES AUSTRIA AG2 citations72
US10109489B2Oct 23, 2018
Method for producing a superjunction device
INFINEON TECHNOLOGIES AUSTRIA AG3 citations72
US9711357B1Jul 18, 2017
Method of manufacturing a semiconductor device with epitaxial layers and an alignment structure
INFINEON TECHNOLOGIES AUSTRIA AG6 citations72
US9704984B2Jul 11, 2017
Super-junction semiconductor device comprising junction termination extension structure and method of manufacturing
INFINEON TECHNOLOGIES AUSTRIA AG5 citations72
INFINEON TECHNOLOGIES AG
10 patentsUS6388287B2May 14, 2002
Switch mode power supply with reduced switching losses
INFINEON TECHNOLOGIES AG81 citations98
US6870201B1Mar 22, 2005
High voltage resistant edge structure for semiconductor components
INFINEON TECHNOLOGIES AG74 citations97
US6667514B2Dec 23, 2003
Semiconductor component with a charge compensation structure and associated fabrication
INFINEON TECHNOLOGIES AG24 citations93
US6639272B2Oct 28, 2003
Charge compensation semiconductor configuration
INFINEON TECHNOLOGIES AG38 citations92
US9012980B1Apr 21, 2015
Method of manufacturing a semiconductor device including proton irradiation and semiconductor device including charge compensation structure
INFINEON TECHNOLOGIES AG11 citations84
US7867879B2Jan 11, 2011
Method for dividing a semiconductor substrate and a method for producing a semiconductor circuit arrangement
INFINEON TECHNOLOGIES AG8 citations84
US7193293B2Mar 20, 2007
Semiconductor component with a compensation layer, a depletion zone, and a complementary depletion zone, circuit configuration with the semiconductor component, and method of doping the compensation layer of the semiconductor component
INFINEON TECHNOLOGIES AG7 citations74
US6812524B2Nov 2, 2004
Field effect controlled semiconductor component
INFINEON TECHNOLOGIES AG12 citations74
US10128328B2Nov 13, 2018
Method of manufacturing semiconductor devices and semiconductor device containing hydrogen-related donors
INFINEON TECHNOLOGIES AG2 citations73
US9570576B2Feb 14, 2017
Method for forming a semiconductor device having insulating parts or layers formed via anodic oxidation
INFINEON TECHNOLOGIES AG2 citations73
INFINEON TECHNOLOGIES AUSTRIA
6 patentsUS7459365B2Dec 2, 2008
Method for fabricating a semiconductor component
INFINEON TECHNOLOGIES AUSTRIA29 citations92
US9166005B2Oct 20, 2015
Semiconductor device with charge compensation structure
INFINEON TECHNOLOGIES AUSTRIA8 citations84
US9147763B2Sep 29, 2015
Charge-compensation semiconductor device
INFINEON TECHNOLOGIES AUSTRIA4 citations73
US9070580B2Jun 30, 2015
Semiconductor device with a super junction structure based on a compensation structure with compensation layers and having a compensation rate gradient
INFINEON TECHNOLOGIES AUSTRIA6 citations73
US8866222B2Oct 21, 2014
Charge compensation semiconductor device
INFINEON TECHNOLOGIES AUSTRIA5 citations73
US7943449B2May 17, 2011
Semiconductor component structure with vertical dielectric layers
INFINEON TECHNOLOGIES AUSTRIA6 citations72
WEBER HANS
4 patentsUS8421196B2Apr 16, 2013
Semiconductor device and manufacturing method
WEBER HANS9 citations84
US9097777B2Aug 4, 2015
Method of magnetic resonance imaging for the selection and recording of curved slices
WEBER HANS10 citations82
US8716788B2May 6, 2014
Semiconductor device with self-charging field electrodes
WEBER HANS4 citations72
US8823372B2Sep 2, 2014
Method for homogenizing resolution in magnet resonance tomography measurements using non-linear encoding fields
WEBER HANS5 citations70
MTU MUENCHEN GMBH
2 patentsINFINEON AG
1 patentSPORTSMEDIA TECH CORP
1 patentINFINEON TECHNOLOGOES AG
1 patentHIRLER FRANZ
1 patentWEIS ROLF
1 patentWILLMEROTH ARMIN
1 patentSCHULZE HANS-JOACHIM
1 patentALGINA AG
1 patentSTECHER MATTHIAS
1 patentBENNINGER AG MASCHF
1 patentINFINEON TECHNOLGIES AG
1 patentBAYER AG
1 patentBASF AG
1 patentW & E UMWELTTECHNIK AG
1 patentINOTEC GMBH TRANSPORT
1 patentKRANTZ H GMBH & CO
1 patentSIEMENS HEALTHCARE GMBH
1 patentShowing the top 50 of 139 patents by PatentIndex Score.