Inventor
FACHMANN CHRISTIAN
AT31 patents
⚠️ This page may combine multiple inventors who share the name “FACHMANN CHRISTIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AUSTRIA AG
21 patentsUS11211483B2Dec 28, 2021
Method for forming an insulation layer in a semiconductor body and transistor device
INFINEON TECHNOLOGIES AUSTRIA AG4 citations72
US10811529B2Oct 20, 2020
Transistor device with gate resistor
INFINEON TECHNOLOGIES AUSTRIA AG5 citations72
US12525499B2Jan 13, 2026
Method of manufacturing semiconductor chips having a side wall sealing
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US12176172B2Dec 24, 2024
Power relay circuit
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US12014973B2Jun 18, 2024
Multi-die-package and method
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11329126B2May 10, 2022
Method of manufacturing a superjunction semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US11139125B2Oct 5, 2021
Power relay circuit
INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US11088275B2Aug 10, 2021
Method for operating a superjunction transistor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11081430B2Aug 3, 2021
Multi-die-package and method
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US10411126B2Sep 10, 2019
Semiconductor device having a first through contact structure in ohmic contact with the gate electrode
INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US10374032B2Aug 6, 2019
Field-effect semiconductor device having N and P-doped pillar regions
INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US11869966B2Jan 9, 2024
Method for forming an insulation layer in a semiconductor body and transistor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations61
US12424501B2Sep 23, 2025
Semiconductor package including a chip-substrate composite semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations58
US12273098B2Apr 8, 2025
Method for operating a power transistor circuit
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US10651271B2May 12, 2020
Charge compensation semiconductor devices
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US10224394B2Mar 5, 2019
Superjunction semiconductor device having a superstructure
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US10157982B2Dec 18, 2018
Charge compensation semiconductor devices
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US9905639B2Feb 27, 2018
Method of manufacturing superjunction semiconductor devices with a superstructure in alignment with a foundation
INFINEON TECHNOLOGIES AUSTRIA AG1 citations51
US9679895B2Jun 13, 2017
Semiconductor device having switchable regions with different transconductances
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US9583395B2Feb 28, 2017
Method for manufacturing a semiconductor switching device with different local cell geometry
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US12368052B2Jul 22, 2025
Chip-substrate composite semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations47
INFINEON TECHNOLOGIES AG
4 patentsUS9812373B2Nov 7, 2017
Semiconductor package with top side cooling heat sink thermal pathway
INFINEON TECHNOLOGIES AG4 citations72
US11527468B2Dec 13, 2022
Semiconductor oxide or glass based connection body with wiring structure
INFINEON TECHNOLOGIES AG0 citations62
US9773736B2Sep 26, 2017
Intermediate layer for copper structuring and methods of formation thereof
INFINEON TECHNOLOGIES AG1 citations50
US9349794B2May 24, 2016
Layer arrangement
INFINEON TECHNOLOGIES AG0 citations48
INFINEON TECHNOLOGIES AUSTRIA
3 patentsUS9293533B2Mar 22, 2016
Semiconductor switching devices with different local transconductance
INFINEON TECHNOLOGIES AUSTRIA5 citations72
US9231049B1Jan 5, 2016
Semiconductor switching device with different local cell geometry
INFINEON TECHNOLOGIES AUSTRIA0 citations51
US9349795B2May 24, 2016
Semiconductor switching device with different local threshold voltage
INFINEON TECHNOLOGIES AUSTRIA0 citations40