P

Inventor

FACHMANN CHRISTIAN

AT31 patents
⚠️ This page may combine multiple inventors who share the name “FACHMANN CHRISTIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AUSTRIA AG

21 patents
US11211483B2Dec 28, 2021

Method for forming an insulation layer in a semiconductor body and transistor device

INFINEON TECHNOLOGIES AUSTRIA AG4 citations72
US10811529B2Oct 20, 2020

Transistor device with gate resistor

INFINEON TECHNOLOGIES AUSTRIA AG5 citations72
US12525499B2Jan 13, 2026

Method of manufacturing semiconductor chips having a side wall sealing

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US12176172B2Dec 24, 2024

Power relay circuit

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US12014973B2Jun 18, 2024

Multi-die-package and method

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11329126B2May 10, 2022

Method of manufacturing a superjunction semiconductor device

INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US11139125B2Oct 5, 2021

Power relay circuit

INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US11088275B2Aug 10, 2021

Method for operating a superjunction transistor device

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11081430B2Aug 3, 2021

Multi-die-package and method

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US10411126B2Sep 10, 2019

Semiconductor device having a first through contact structure in ohmic contact with the gate electrode

INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US10374032B2Aug 6, 2019

Field-effect semiconductor device having N and P-doped pillar regions

INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US11869966B2Jan 9, 2024

Method for forming an insulation layer in a semiconductor body and transistor device

INFINEON TECHNOLOGIES AUSTRIA AG0 citations61
US12424501B2Sep 23, 2025

Semiconductor package including a chip-substrate composite semiconductor device

INFINEON TECHNOLOGIES AUSTRIA AG0 citations58
US12273098B2Apr 8, 2025

Method for operating a power transistor circuit

INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US10651271B2May 12, 2020

Charge compensation semiconductor devices

INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US10224394B2Mar 5, 2019

Superjunction semiconductor device having a superstructure

INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US10157982B2Dec 18, 2018

Charge compensation semiconductor devices

INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US9905639B2Feb 27, 2018

Method of manufacturing superjunction semiconductor devices with a superstructure in alignment with a foundation

INFINEON TECHNOLOGIES AUSTRIA AG1 citations51
US9679895B2Jun 13, 2017

Semiconductor device having switchable regions with different transconductances

INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US9583395B2Feb 28, 2017

Method for manufacturing a semiconductor switching device with different local cell geometry

INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US12368052B2Jul 22, 2025

Chip-substrate composite semiconductor device

INFINEON TECHNOLOGIES AUSTRIA AG0 citations47

INFINEON TECHNOLOGIES AG

4 patents

INFINEON TECHNOLOGIES AUSTRIA

3 patents

LANDAU STEFAN

1 patent

INFINEON TECH DRESDEN GMBH & CO KG

1 patent

TRICHY RENGARAJAN GOPALAKRISHNAN

1 patent