Inventor
KAINDL WINFRIED
DE20 patents
⚠️ This page may combine multiple inventors who share the name “KAINDL WINFRIED”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AUSTRIA AG
10 patentsUS11211483B2Dec 28, 2021
Method for forming an insulation layer in a semiconductor body and transistor device
INFINEON TECHNOLOGIES AUSTRIA AG4 citations72
US10374056B2Aug 6, 2019
Latch-up resistant transistor
INFINEON TECHNOLOGIES AUSTRIA AG2 citations69
US11869966B2Jan 9, 2024
Method for forming an insulation layer in a semiconductor body and transistor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations61
US10943987B2Mar 9, 2021
Latch-up resistant transistor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations58
US9899510B2Feb 20, 2018
Semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US9722020B2Aug 1, 2017
Super junction semiconductor device having columnar super junction regions extending into a drift layer
INFINEON TECHNOLOGIES AUSTRIA AG0 citations52
US9524966B2Dec 20, 2016
Semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG1 citations52
US12273098B2Apr 8, 2025
Method for operating a power transistor circuit
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US11374125B2Jun 28, 2022
Vertical transistor device having a discharge region comprising at least one lower dose section and located at least partially below a gate electrode pad
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50
US10256325B2Apr 9, 2019
Radiation-hardened power semiconductor devices and methods of forming them
INFINEON TECHNOLOGIES AUSTRIA AG0 citations36
INFINEON TECHNOLOGIES AUSTRIA
6 patentsUS9070580B2Jun 30, 2015
Semiconductor device with a super junction structure based on a compensation structure with compensation layers and having a compensation rate gradient
INFINEON TECHNOLOGIES AUSTRIA6 citations73
US9029944B2May 12, 2015
Super junction semiconductor device comprising implanted zones
INFINEON TECHNOLOGIES AUSTRIA5 citations73
US8975136B2Mar 10, 2015
Manufacturing a super junction semiconductor device
INFINEON TECHNOLOGIES AUSTRIA4 citations73
US9349792B2May 24, 2016
Super junction semiconductor device having columnar super junction regions
INFINEON TECHNOLOGIES AUSTRIA2 citations63
US7977737B2Jul 12, 2011
Semiconductor device having additional capacitance to inherent gate-drain or inherent drain-source capacitance
INFINEON TECHNOLOGIES AUSTRIA4 citations62
US7982253B2Jul 19, 2011
Semiconductor device with a dynamic gate-drain capacitance
INFINEON TECHNOLOGIES AUSTRIA0 citations52