Inventor
CHOW DAVID H
US32 patents
⚠️ This page may combine multiple inventors who share the name “CHOW DAVID H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HRL LAB LLC
20 patentsUS6320212B1Nov 20, 2001
Superlattice fabrication for InAs/GaSb/AISb semiconductor structures
HRL LAB LLC60 citations96
US7800067B1Sep 21, 2010
Electronically tunable and reconfigurable hyperspectral photon detector
HRL LAB LLC34 citations92
US7652252B1Jan 26, 2010
Electronically tunable and reconfigurable hyperspectral photon detector
HRL LAB LLC20 citations92
US6635907B1Oct 21, 2003
Type II interband heterostructure backward diodes
HRL LAB LLC25 citations92
US7868335B1Jan 11, 2011
Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs
HRL LAB LLC7 citations84
US7569872B1Aug 4, 2009
Bipolar transistors with low parasitic losses
HRL LAB LLC12 citations84
US7368765B1May 6, 2008
Bipolar transistors with low parasitic losses
HRL LAB LLC9 citations84
US11314109B1Apr 26, 2022
Electrically switchable infrared mirrors using phase-change chalcogenides materials
HRL LAB LLC6 citations74
US6727153B2Apr 27, 2004
Superlattice fabrication for InAs/GaSb/AlSb semiconductor structures
HRL LAB LLC8 citations74
US7170105B1Jan 30, 2007
Type II interband heterostructure backward diodes
HRL LAB LLC7 citations73
US7531851B1May 12, 2009
Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same
HRL LAB LLC6 citations72
US7755023B1Jul 13, 2010
Electronically tunable and reconfigurable hyperspectral photon detector
HRL LAB LLC5 citations63
US7700969B1Apr 20, 2010
Type II interband heterostructure backward diodes
HRL LAB LLC3 citations62
US6734470B1May 11, 2004
Laterally varying multiple diodes
HRL LAB LLC2 citations62
US6507043B1Jan 14, 2003
Epitaxially-grown backward diode
HRL LAB LLC4 citations62
US11302739B1Apr 12, 2022
High quantum efficiency superlattice infrared detector
HRL LAB LLC0 citations61
US7372084B1May 13, 2008
Low power bipolar transistors with low parasitic losses
HRL LAB LLC4 citations61
US6812070B2Nov 2, 2004
Epitaxially-grown backward diode
HRL LAB LLC1 citations52
US7582536B1Sep 1, 2009
Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same
HRL LAB LLC0 citations51
US7514708B2Apr 7, 2009
80 nanometer diameter resonant tunneling diode with improved peak-to-valley ratio
HRL LAB LLC0 citations50
HUGHES AIRCRAFT CO
7 patentsUS5577061ANov 19, 1996
Superlattice cladding layers for mid-infrared lasers
HUGHES AIRCRAFT CO104 citations97
US5594750AJan 14, 1997
Selectively Si-doped InAs/A1AsSb short-period-superlattices as N-type cladding layers for mid-IR laser structures grown on InAs substrates
HUGHES AIRCRAFT CO52 citations91
US5606178AFeb 25, 1997
Bipolar resonant tunneling transistor
HUGHES AIRCRAFT CO17 citations73
US5543628AAug 6, 1996
Quantum well infrared filter
HUGHES AIRCRAFT CO16 citations73
US5489786AFeb 6, 1996
Current-controlled resonant tunneling device
HUGHES AIRCRAFT CO7 citations73
US5296721AMar 22, 1994
Strained interband resonant tunneling negative resistance diode
HUGHES AIRCRAFT CO10 citations73
US5451552ASep 19, 1995
Method for improvement of optical quality and reduction of background doping in gainSB/INAS superlattices
HUGHES AIRCRAFT CO8 citations66