Inventor
CHI CHENG
CN77 patents
⚠️ This page may combine multiple inventors who share the name “CHI CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
40 patentsUS10157798B1Dec 18, 2018
Uniform bottom spacers in vertical field effect transistors
IBM23 citations94
US9589847B1Mar 7, 2017
Metal layer tip to tip short
IBM21 citations94
US9786557B1Oct 10, 2017
Two-dimensional self-aligned super via integration on self-aligned gate contact
IBM18 citations93
US9536750B1Jan 3, 2017
Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme
IBM14 citations93
US10461174B1Oct 29, 2019
Vertical field effect transistors with self aligned gate and source/drain contacts
IBM18 citations86
US10431651B1Oct 1, 2019
Nanosheet transistor with robust source/drain isolation from substrate
IBM12 citations84
US10361315B1Jul 23, 2019
Method and apparatus of fabricating source and drain epitaxy for vertical field effect transistor
IBM9 citations84
US10199464B2Feb 5, 2019
Techniques for VFET top source/drain epitaxy
IBM6 citations84
US10090410B1Oct 2, 2018
Forming a combination of long channel devices and vertical transport fin field effect transistors on the same substrate
IBM7 citations84
US10157789B2Dec 18, 2018
Via formation using sidewall image transfer process to define lateral dimension
IBM12 citations83
US9632408B1Apr 25, 2017
Graphoepitaxy directed self assembly
IBM15 citations83
US9490168B1Nov 8, 2016
Via formation using sidewall image transfer process to define lateral dimension
IBM10 citations83
US12057387B2Aug 6, 2024
Decoupling capacitor inside gate cut trench
IBM2 citations73
US11588105B2Feb 21, 2023
Phase-change memory device with reduced programming voltage
IBM2 citations73
US10832943B2Nov 10, 2020
Gate contact over active region with self-aligned source/drain contact
IBM4 citations73
US10658459B2May 19, 2020
Nanosheet transistor with robust source/drain isolation from substrate
IBM3 citations73
US10283407B2May 7, 2019
Two-dimensional self-aligned super via integration on self-aligned gate contact
IBM4 citations73
US10242881B2Mar 26, 2019
Self-aligned single dummy fin cut with tight pitch
IBM3 citations73
US10170591B2Jan 1, 2019
Self-aligned finFET formation
IBM1 citations73
US10170582B1Jan 1, 2019
Uniform bottom spacer for vertical field effect transistor
IBM6 citations73
US9947548B2Apr 17, 2018
Self-aligned single dummy fin cut with tight pitch
IBM2 citations73
US9887133B2Feb 6, 2018
Two-dimensional self-aligned super via integration on self-aligned gate contact
IBM3 citations73
US9810980B1Nov 7, 2017
Graphoepitaxy directed self assembly
IBM3 citations72
US12400144B2Aug 26, 2025
Machine learning for computational patterning
IBM1 citations64
US12135497B2Nov 5, 2024
Random weight initialization of non-volatile memory array
IBM0 citations63
US11990470B2May 21, 2024
Ferroelectric and paraelectric stack capacitors
IBM0 citations63
US11916014B2Feb 27, 2024
Gate contact inside gate cut trench
IBM0 citations63
US11527647B2Dec 13, 2022
Field effect transistor (FET) devices
IBM0 citations63
US11508823B2Nov 22, 2022
Low capacitance low RC wrap-around-contact
IBM1 citations63
US11502252B2Nov 15, 2022
Resistive switching memory cell
IBM0 citations63
US11456416B2Sep 27, 2022
Resistive switching memory cell
IBM0 citations63
US11424362B2Aug 23, 2022
NCFETS with complimentary capacitance matching using stacked n-type and p-type nanosheets
IBM0 citations63
US11335730B2May 17, 2022
Vertical resistive memory device with embedded selectors
IBM0 citations63
US11205592B2Dec 21, 2021
Self-aligned top via structure
IBM0 citations63
US10916630B2Feb 9, 2021
Nanosheet devices with improved electrostatic integrity
IBM0 citations63
US10916650B2Feb 9, 2021
Uniform bottom spacer for VFET devices
IBM0 citations63
US9929020B2Mar 27, 2018
Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme
IBM1 citations63
US12382621B2Aug 5, 2025
Decoupling capacitor inside gate cut trench
IBM0 citations62
US11916099B2Feb 27, 2024
Multilayer dielectric for metal-insulator-metal capacitor
IBM0 citations62
US11430954B2Aug 30, 2022
Resistance drift mitigation in non-volatile memory cell
IBM0 citations59
GLOBALFOUNDRIES INC
4 patentsUS10109533B1Oct 23, 2018
Nanosheet devices with CMOS epitaxy and method of forming
GLOBALFOUNDRIES INC23 citations94
US10366931B2Jul 30, 2019
Nanosheet devices with CMOS epitaxy and method of forming
GLOBALFOUNDRIES INC6 citations84
US10665586B2May 26, 2020
Method of concurrently forming source/drain and gate contacts and related device
GLOBALFOUNDRIES INC2 citations73
US9837402B1Dec 5, 2017
Method of concurrently forming source/drain and gate contacts and related device
GLOBALFOUNDRIES INC2 citations73
BEIJING KUAIMAJIABIAN TECHNOLOGY CO LTD
2 patentsVERISILICON MICROELECTRONICS SHANGHAI CO LTD
1 patentNEUSOFT CORP
1 patentGLOBALFOUNDRIES US INC
1 patentBEIJING BYTEDANCE NETWORK TECH CO LTD
1 patentShowing the top 50 of 77 patents by PatentIndex Score.