P

Inventor

CHI CHENG

CN77 patents
⚠️ This page may combine multiple inventors who share the name “CHI CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

40 patents
US10157798B1Dec 18, 2018

Uniform bottom spacers in vertical field effect transistors

IBM23 citations94
US9589847B1Mar 7, 2017

Metal layer tip to tip short

IBM21 citations94
US9786557B1Oct 10, 2017

Two-dimensional self-aligned super via integration on self-aligned gate contact

IBM18 citations93
US9536750B1Jan 3, 2017

Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme

IBM14 citations93
US10461174B1Oct 29, 2019

Vertical field effect transistors with self aligned gate and source/drain contacts

IBM18 citations86
US10431651B1Oct 1, 2019

Nanosheet transistor with robust source/drain isolation from substrate

IBM12 citations84
US10361315B1Jul 23, 2019

Method and apparatus of fabricating source and drain epitaxy for vertical field effect transistor

IBM9 citations84
US10199464B2Feb 5, 2019

Techniques for VFET top source/drain epitaxy

IBM6 citations84
US10090410B1Oct 2, 2018

Forming a combination of long channel devices and vertical transport fin field effect transistors on the same substrate

IBM7 citations84
US10157789B2Dec 18, 2018

Via formation using sidewall image transfer process to define lateral dimension

IBM12 citations83
US9632408B1Apr 25, 2017

Graphoepitaxy directed self assembly

IBM15 citations83
US9490168B1Nov 8, 2016

Via formation using sidewall image transfer process to define lateral dimension

IBM10 citations83
US12057387B2Aug 6, 2024

Decoupling capacitor inside gate cut trench

IBM2 citations73
US11588105B2Feb 21, 2023

Phase-change memory device with reduced programming voltage

IBM2 citations73
US10832943B2Nov 10, 2020

Gate contact over active region with self-aligned source/drain contact

IBM4 citations73
US10658459B2May 19, 2020

Nanosheet transistor with robust source/drain isolation from substrate

IBM3 citations73
US10283407B2May 7, 2019

Two-dimensional self-aligned super via integration on self-aligned gate contact

IBM4 citations73
US10242881B2Mar 26, 2019

Self-aligned single dummy fin cut with tight pitch

IBM3 citations73
US10170591B2Jan 1, 2019

Self-aligned finFET formation

IBM1 citations73
US10170582B1Jan 1, 2019

Uniform bottom spacer for vertical field effect transistor

IBM6 citations73
US9947548B2Apr 17, 2018

Self-aligned single dummy fin cut with tight pitch

IBM2 citations73
US9887133B2Feb 6, 2018

Two-dimensional self-aligned super via integration on self-aligned gate contact

IBM3 citations73
US9810980B1Nov 7, 2017

Graphoepitaxy directed self assembly

IBM3 citations72
US12400144B2Aug 26, 2025

Machine learning for computational patterning

IBM1 citations64
US12135497B2Nov 5, 2024

Random weight initialization of non-volatile memory array

IBM0 citations63
US11990470B2May 21, 2024

Ferroelectric and paraelectric stack capacitors

IBM0 citations63
US11916014B2Feb 27, 2024

Gate contact inside gate cut trench

IBM0 citations63
US11527647B2Dec 13, 2022

Field effect transistor (FET) devices

IBM0 citations63
US11508823B2Nov 22, 2022

Low capacitance low RC wrap-around-contact

IBM1 citations63
US11502252B2Nov 15, 2022

Resistive switching memory cell

IBM0 citations63
US11456416B2Sep 27, 2022

Resistive switching memory cell

IBM0 citations63
US11424362B2Aug 23, 2022

NCFETS with complimentary capacitance matching using stacked n-type and p-type nanosheets

IBM0 citations63
US11335730B2May 17, 2022

Vertical resistive memory device with embedded selectors

IBM0 citations63
US11205592B2Dec 21, 2021

Self-aligned top via structure

IBM0 citations63
US10916630B2Feb 9, 2021

Nanosheet devices with improved electrostatic integrity

IBM0 citations63
US10916650B2Feb 9, 2021

Uniform bottom spacer for VFET devices

IBM0 citations63
US9929020B2Mar 27, 2018

Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme

IBM1 citations63
US12382621B2Aug 5, 2025

Decoupling capacitor inside gate cut trench

IBM0 citations62
US11916099B2Feb 27, 2024

Multilayer dielectric for metal-insulator-metal capacitor

IBM0 citations62
US11430954B2Aug 30, 2022

Resistance drift mitigation in non-volatile memory cell

IBM0 citations59

GLOBALFOUNDRIES INC

4 patents

BEIJING KUAIMAJIABIAN TECHNOLOGY CO LTD

2 patents

VERISILICON MICROELECTRONICS SHANGHAI CO LTD

1 patent

NEUSOFT CORP

1 patent

GLOBALFOUNDRIES US INC

1 patent

BEIJING BYTEDANCE NETWORK TECH CO LTD

1 patent

Showing the top 50 of 77 patents by PatentIndex Score.