P

Inventor

SOHN CHANG WOO

KR22 patents
⚠️ This page may combine multiple inventors who share the name “SOHN CHANG WOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

15 patents
US9929235B1Mar 27, 2018

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD18 citations94
US9728601B2Aug 8, 2017

Semiconductor devices including active fins and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations83
US11164943B2Nov 2, 2021

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US10756179B2Aug 25, 2020

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US10403717B2Sep 3, 2019

Semiconductor devices including contact structures that partially overlap silicide layers

SAMSUNG ELECTRONICS CO LTD2 citations72
US10242917B2Mar 26, 2019

Semiconductor devices including active fins and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US9793381B2Oct 17, 2017

Method for manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations72
US11837638B2Dec 5, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations71
US11699754B2Jul 11, 2023

Gate structure of vertical FET and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations71
US11640973B2May 2, 2023

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11552182B2Jan 10, 2023

Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11107906B2Aug 31, 2021

Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US12142650B2Nov 12, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations60
US11233146B2Jan 25, 2022

Gate structure of vertical FET and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations60
US10347718B2Jul 9, 2019

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52

HYUNDAI MOTOR CO LTD

6 patents

LEE DO-SUN

1 patent