Inventor
JUNG YOUNG CHAI
KR11 patents
⚠️ This page may combine multiple inventors who share the name “JUNG YOUNG CHAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
10 patentsUS11699754B2Jul 11, 2023
Gate structure of vertical FET and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US11145757B2Oct 12, 2021
Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US11552182B2Jan 10, 2023
Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11107906B2Aug 31, 2021
Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US10910370B2Feb 2, 2021
Integrated circuit devices including a vertical field-effect transistor (VFET) and a fin field-effect transistor (FinFET) and methods of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US11233146B2Jan 25, 2022
Gate structure of vertical FET and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11271091B2Mar 8, 2022
Fin structure for vertical field effect transistor having two-dimensional shape in plan view
SAMSUNG ELECTRONICS CO LTD0 citations51
US10790368B2Sep 29, 2020
Vertical FET devices including a contact on protruding portions of a substrate
SAMSUNG ELECTRONICS CO LTD0 citations51
US11735659B2Aug 22, 2023
Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US11296210B2Apr 5, 2022
Symmetrical two-dimensional fin structure for vertical field effect transistor and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations50