Inventor

CHIANG KATHERINE H

TW98 patents

Patents

50 patents

US11282572B2Mar 22, 2022

Multinary bit cells for memory devices and network applications and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84

US10700125B2Jun 30, 2020

Integrated system chip with magnetic module

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84

US11854619B2Dec 26, 2023

Memory device with content addressable memory units

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11749341B2Sep 5, 2023

Multinary bit cells for memory devices and network applications and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11450401B2Sep 20, 2022

Multinary bit cells for memory devices and network applications and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12015065B2Jun 18, 2024

Tri-gate orthogonal channel transistor and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11916121B2Feb 27, 2024

Tri-gate orthogonal channel transistor and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11915736B2Feb 27, 2024

Ferroelectric memory operation bias and power domains

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63

US11856114B2Dec 26, 2023

Device signature based on trim and redundancy information

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11778836B2Oct 3, 2023

Memory cell with unipolar selectors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11716862B2Aug 1, 2023

Non-volatile memory with dual gated control

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11030380B2Jun 8, 2021

Synergistic design method for fabricating integrated circuit

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63

US12593442B2Mar 31, 2026

Semiconductor device including integrated capacitor and vertical channel transistor and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12567477B2Mar 3, 2026

Method for LUT-free memory repair

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12568812B2Mar 3, 2026

Back-end-of-line CMOS inverter having twin channels and one gate electrode and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12394707B2Aug 19, 2025

Back-end-of-line CMOS inverter having reduced size and reduced short-channel effects and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12369328B2Jul 22, 2025

Vertical access transistors and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12309990B2May 20, 2025

Data backup unit for static random-access memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12249608B2Mar 11, 2025

Method for manufacturing semiconductor structure and semiconductor structure thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12245432B2Mar 4, 2025

Memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12211574B2Jan 28, 2025

Method for error correction coding with multiple hash groupings and device for performing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12176022B2Dec 24, 2024

Programming and reading circuit for dynamic random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12142695B2Nov 12, 2024

Transistor device having fin-shaped channel and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12131780B2Oct 29, 2024

Memory device with content addressable memory units

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12125548B2Oct 22, 2024

Memory array test method and system

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12080768B2Sep 3, 2024

Transistor, semiconductor structure, and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12014790B2Jun 18, 2024

Method, system and computer program product for memory repair

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62

US11963365B2Apr 16, 2024

Back-end active device, semiconductor device and semiconductor chip

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11937426B2Mar 19, 2024

Memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11895825B2Feb 6, 2024

Semiconductor device including integrated capacitor and vertical channel transistor and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11895832B2Feb 6, 2024

Memory integrated circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11839071B2Dec 5, 2023

Vertical access transistors and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11776647B2Oct 3, 2023

Memory repair using optimized redundancy utilization

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11769568B2Sep 26, 2023

Method for LUT-free memory repair

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11715546B2Aug 1, 2023

Memory array test method and system

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11687412B2Jun 27, 2023

Processing-in-memory instruction set with homomorphic error correction

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11610640B1Mar 21, 2023

Method for error correction coding with multiple hash groupings and device for performing the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62

US11574909B2Feb 7, 2023

Semiconductor device, method for manufacturing the same, and integrated circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

Showing the top 50 of 98 patents by PatentIndex Score.

CHIANG KATHERINE H

Patents

Multinary bit cells for memory devices and network applications and method of manufacturing the same

Integrated system chip with magnetic module

Memory device with content addressable memory units

Multinary bit cells for memory devices and network applications and method of manufacturing the same

Method, system and computer program product for memory repair

Memory device and memory circuit

Memory cell with unipolar selectors

Dual channel transistor device and methods of forming the same

Memory device and method of forming the same

High sensitivity ISFET sensor

Ferroelectric memory operation bias and power domains

Integrated circuit and manufacturing method thereof

Memory cell with unipolar selectors

Non-volatile memory with dual gated control

Thin film transistor based temperature sensor

Device signature based on trim and redundancy information

Multinary bit cells for memory devices and network applications and method of manufacturing the same

Tri-gate orthogonal channel transistor and methods of forming the same

Tri-gate orthogonal channel transistor and methods of forming the same

Ferroelectric memory operation bias and power domains

Device signature based on trim and redundancy information

Memory cell with unipolar selectors

Non-volatile memory with dual gated control

Synergistic design method for fabricating integrated circuit

Semiconductor device including integrated capacitor and vertical channel transistor and methods of forming the same

Method for LUT-free memory repair

Back-end-of-line CMOS inverter having twin channels and one gate electrode and methods of forming the same

Back-end-of-line CMOS inverter having reduced size and reduced short-channel effects and methods of forming the same

Vertical access transistors and methods for forming the same

Data backup unit for static random-access memory device

Method for manufacturing semiconductor structure and semiconductor structure thereof

Memory device and manufacturing method thereof

Method for error correction coding with multiple hash groupings and device for performing the same

Programming and reading circuit for dynamic random access memory

Transistor device having fin-shaped channel and methods for forming the same

Memory device with content addressable memory units

Memory array test method and system

Transistor, semiconductor structure, and manufacturing method thereof

Method, system and computer program product for memory repair

Back-end active device, semiconductor device and semiconductor chip

Memory device and manufacturing method thereof

Semiconductor device including integrated capacitor and vertical channel transistor and methods of forming the same

Memory integrated circuit

Vertical access transistors and methods for forming the same

Memory repair using optimized redundancy utilization

Method for LUT-free memory repair

Memory array test method and system

Processing-in-memory instruction set with homomorphic error correction

Method for error correction coding with multiple hash groupings and device for performing the same

Semiconductor device, method for manufacturing the same, and integrated circuit