Inventor

YAO CHIEN NING

TW50 patents

Patents

50 patents

US11227956B2Jan 18, 2022

Air gap in inner spacers and methods of fabricating the same in field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11967594B2Apr 23, 2024

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11916122B2Feb 27, 2024

Gate all around transistor with dual inner spacers

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11791421B2Oct 17, 2023

Nanosheet field-effect transistor device and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US11735641B2Aug 22, 2023

FinFET structure with airgap and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11670718B2Jun 6, 2023

Semiconductor device structure with inner spacer

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11502183B2Nov 15, 2022

Air gap in inner spacers and methods of fabricating the same in field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US11450663B2Sep 20, 2022

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US11417750B2Aug 16, 2022

Gate air spacer for fin-like field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73

US11309424B2Apr 19, 2022

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US12342587B2Jun 24, 2025

Integrated circuit with nanostructure transistors and bottom dielectric insulators

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64

US12446319B2Oct 14, 2025

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12433008B2Sep 30, 2025

FinFET structure with airgap and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12317540B2May 27, 2025

Method for manufacturing semiconductor structure with isolation feature

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63

US12310056B2May 20, 2025

Method of forming semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12300735B2May 13, 2025

Air gap in inner spacers and methods of fabricating the same in field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12272732B2Apr 8, 2025

Method for forming epitaxial source/drain features and semiconductor devices fabricated thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12211922B2Jan 28, 2025

Gate air spacer for fin-like field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12125922B2Oct 22, 2024

Nanosheet field-effect transistor device and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12107169B2Oct 1, 2024

Contact structure for stacked multi-gate device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11901364B2Feb 13, 2024

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11764281B2Sep 19, 2023

Gate air spacer for fin-like field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11710774B2Jul 25, 2023

Method for forming epitaxial source/drain features and semiconductor devices fabricated thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63

US11699760B2Jul 11, 2023

Contact structure for stacked multi-gate device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11444202B2Sep 13, 2022

Semiconductor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63

US12513937B2Dec 30, 2025

Semiconductor devices and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12457798B2Oct 28, 2025

Dielectric liner for field effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12376348B2Jul 29, 2025

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12336226B2Jun 17, 2025

Semiconductor device structure including stacked nanostructures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12300732B2May 13, 2025

Gate all around transistor with dual inner spacers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12205998B2Jan 21, 2025

Semiconductor device with wrap around silicide and hybrid fin

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12166129B2Dec 10, 2024

Semiconductor device structure with inner spacer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12051736B2Jul 30, 2024

Field effect transistor with inner spacer liner layer and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11996482B2May 28, 2024

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11929287B2Mar 12, 2024

Dielectric liner for field effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62

US11784252B2Oct 10, 2023

Semiconductor device structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11605737B2Mar 14, 2023

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11469326B2Oct 11, 2022

Semiconductor devices and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11335806B2May 17, 2022

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11271113B2Mar 8, 2022

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11189708B2Nov 30, 2021

Semiconductor device structure with gate stack and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62

US12336240B2Jun 17, 2025

Transistor including dielectric barrier and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

US12557358B2Feb 17, 2026

Nanosheet semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

US12532492B2Jan 20, 2026

Structure and formation method of semiconductor device with epitaxial structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

US12520543B2Jan 6, 2026

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

US12484246B2Nov 25, 2025

Method of manufacturing a semiconductor device including forming a sidewall spacer on a sidewall of a channel structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

YAO CHIEN NING

Patents

Nanosheet field-effect transistor device and method of forming

FinFET structure with airgap and method of forming the same

Semiconductor device structure and methods of forming the same

Semiconductor structure and method for forming the same

Air gap in inner spacers and methods of fabricating the same in field-effect transistors

Semiconductor device structure and methods of forming the same

Gate all around transistor with dual inner spacers

Nanosheet field-effect transistor device and method of forming

FinFET structure with airgap and method of forming the same

Semiconductor device structure with inner spacer

Air gap in inner spacers and methods of fabricating the same in field-effect transistors

Semiconductor device structure and methods of forming the same

Gate air spacer for fin-like field effect transistor

Semiconductor device and manufacturing method thereof

Integrated circuit with nanostructure transistors and bottom dielectric insulators

Semiconductor device structure and methods of forming the same

FinFET structure with airgap and method of forming the same

Method for manufacturing semiconductor structure with isolation feature

Method of forming semiconductor device

Air gap in inner spacers and methods of fabricating the same in field-effect transistors

Method for forming epitaxial source/drain features and semiconductor devices fabricated thereof

Gate air spacer for fin-like field effect transistor

Nanosheet field-effect transistor device and method of forming

Contact structure for stacked multi-gate device

Semiconductor device structure and methods of forming the same

Gate air spacer for fin-like field effect transistor

Method for forming epitaxial source/drain features and semiconductor devices fabricated thereof

Contact structure for stacked multi-gate device

Semiconductor device and method of forming the same

Semiconductor devices and methods of fabrication thereof

Dielectric liner for field effect transistors

Semiconductor device structure and method for forming the same

Semiconductor device structure including stacked nanostructures

Gate all around transistor with dual inner spacers

Semiconductor device with wrap around silicide and hybrid fin

Semiconductor device structure with inner spacer

Field effect transistor with inner spacer liner layer and method

Semiconductor device

Dielectric liner for field effect transistors

Semiconductor device structure

Semiconductor device and manufacturing method thereof

Semiconductor devices and methods of fabrication thereof

Semiconductor device structure and method for forming the same

Semiconductor device structure and method for forming the same

Semiconductor device structure with gate stack and method for forming the same

Transistor including dielectric barrier and manufacturing method thereof

Nanosheet semiconductor device and method for manufacturing the same

Structure and formation method of semiconductor device with epitaxial structures

Semiconductor device structure and method for forming the same

Method of manufacturing a semiconductor device including forming a sidewall spacer on a sidewall of a channel structure