Inventor
OKAYAMA YOSHIO
JP50 patents
⚠️ This page may combine multiple inventors who share the name “OKAYAMA YOSHIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANYO ELECTRIC CO
20 patentsUS7915737B2Mar 29, 2011
Packing board for electronic device, packing board manufacturing method, semiconductor module, semiconductor module manufacturing method, and mobile device
SANYO ELECTRIC CO40 citations92
US7485967B2Feb 3, 2009
Semiconductor device with via hole for electric connection
SANYO ELECTRIC CO20 citations92
US7732925B2Jun 8, 2010
Semiconductor device and manufacturing method thereof
SANYO ELECTRIC CO14 citations84
US7492045B2Feb 17, 2009
Semiconductor module, method for manufacturing semiconductor modules and mobile device
SANYO ELECTRIC CO8 citations84
US6831015B1Dec 14, 2004
Fabrication method of semiconductor device and abrasive liquid used therein
SANYO ELECTRIC CO15 citations84
US7759247B2Jul 20, 2010
Manufacturing method of semiconductor device with a barrier layer and a metal layer
SANYO ELECTRIC CO5 citations74
US7256497B2Aug 14, 2007
Semiconductor device with a barrier layer and a metal layer
SANYO ELECTRIC CO9 citations74
US7855452B2Dec 21, 2010
Semiconductor module, method of manufacturing semiconductor module, and mobile device
SANYO ELECTRIC CO5 citations73
US6841451B2Jan 11, 2005
Method of fabricating semiconductor device having alignment mark
SANYO ELECTRIC CO7 citations73
US7495881B2Feb 24, 2009
Chucking method and processing method using the same
SANYO ELECTRIC CO2 citations63
US7241679B2Jul 10, 2007
Method of manufacturing semiconductor device
SANYO ELECTRIC CO6 citations63
US6995457B2Feb 7, 2006
Wiring structure and manufacturing method therefor, semiconductor device including wiring structure and wiring board
SANYO ELECTRIC CO3 citations63
US7989359B2Aug 2, 2011
Semiconductor module manufacturing method, semiconductor module, and mobile device
SANYO ELECTRIC CO2 citations62
US7750478B2Jul 6, 2010
Semiconductor device with via hole of uneven width
SANYO ELECTRIC CO4 citations62
US6724057B2Apr 20, 2004
Semiconductor device with reduced short circuiting between gate electrode and source/drain region
SANYO ELECTRIC CO2 citations62
US7172962B2Feb 6, 2007
Method of manufacturing a semiconductor device
SANYO ELECTRIC CO4 citations60
US6916743B2Jul 12, 2005
Semiconductor device and method for manufacturing thereof
SANYO ELECTRIC CO6 citations60
US9439285B2Sep 6, 2016
Device mounting board and semiconductor power module
SANYO ELECTRIC CO0 citations52
US8497163B2Jul 30, 2013
Method for manufacturing a circuit device
SANYO ELECTRIC CO1 citations52
US8362611B2Jan 29, 2013
Semiconductor module, method for manufacturing semiconductor module, and portable device
SANYO ELECTRIC CO0 citations52
PANASONIC IP MAN CO LTD
9 patentsUS9325257B2Apr 26, 2016
Power semiconductor device to reduce voltage variation between terminals
PANASONIC IP MAN CO LTD5 citations73
US10304740B2May 28, 2019
RAMO4 monocrystalline substrate
PANASONIC IP MAN CO LTD2 citations71
US11248310B2Feb 15, 2022
Group III nitride substrate and method for producing group III nitride crystal
PANASONIC IP MAN CO LTD0 citations62
US10350725B2Jul 16, 2019
RAMO4 substrate and manufacturing method thereof
PANASONIC IP MAN CO LTD1 citations60
US10246796B2Apr 2, 2019
RAMO4 substrate
PANASONIC IP MAN CO LTD1 citations60
US11370076B2Jun 28, 2022
RAMO4 substrate and manufacturing method thereof
PANASONIC IP MAN CO LTD0 citations50
US10059590B2Aug 28, 2018
Method for producing group III nitride crystal
PANASONIC IP MAN CO LTD0 citations49
US12282199B2Apr 22, 2025
Light emitting device, manufacturing method therefor, and waveguide structure
PANASONIC IP MAN CO LTD0 citations48
US11056389B2Jul 6, 2021
Method of manufacture of group III nitride semiconductor
PANASONIC IP MAN CO LTD0 citations42
UNIV OSAKA
5 patentsUS10927476B2Feb 23, 2021
Production method for group III nitride crystal
UNIV OSAKA1 citations62
US11795573B2Oct 24, 2023
Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate
UNIV OSAKA0 citations61
US11396716B2Jul 26, 2022
Group-III nitride substrate containing carbon at a surface region thereof
UNIV OSAKA0 citations61
US10202710B2Feb 12, 2019
Process for producing group III nitride crystal and apparatus for producing group III nitride crystal
UNIV OSAKA1 citations60
US11220759B2Jan 11, 2022
Method of manufacturing a group III-nitride crystal comprising a nucleation step, a pyramid growth step, a lateral growth step, and a flat thick film growth step
UNIV OSAKA0 citations51
PANASONIC CORP
4 patentsUS11713517B2Aug 1, 2023
Group-III nitride substrate
PANASONIC CORP0 citations61
US11713516B2Aug 1, 2023
Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal
PANASONIC CORP0 citations61
US11624128B2Apr 11, 2023
Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal
PANASONIC CORP0 citations61
US11377757B2Jul 5, 2022
Method for producing group III nitride crystal and seed substrate
PANASONIC CORP0 citations52
OKAYAMA YOSHIO
2 patentsYANASE YASUYUKI
2 patentsSAITOU KOUICHI
2 patentsUS8438724B2May 14, 2013
Method for producing substrate for mounting device and method for producing a semiconductor module
SAITOU KOUICHI0 citations39
US8237258B2Aug 7, 2012
Semiconductor module including a semiconductor device, a device mounting board, and a protecting layer therebetween
SAITOU KOUICHI0 citations39