Inventor
CHANG HSIANG-PI
TW35 patents
⚠️ This page may combine multiple inventors who share the name “CHANG HSIANG-PI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
28 patentsUS11031508B2Jun 8, 2021
Semiconductor device with treated interfacial layer on silicon germanium
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10629749B2Apr 21, 2020
Method of treating interfacial layer on silicon germanium
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9592585B2Mar 14, 2017
System and method for CMP station cleanliness
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11978674B2May 7, 2024
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11688812B2Jun 27, 2023
Semiconductor device with treated interfacial layer on silicon germanium
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11581416B1Feb 14, 2023
Gate structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10978357B2Apr 13, 2021
Semiconductor arrangement and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9960085B2May 1, 2018
Multiple patterning techniques for metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11031291B2Jun 8, 2021
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11894461B2Feb 6, 2024
Dipoles in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12588234B2Mar 24, 2026
Semiconductor devices with implanted STI regions and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12406859B2Sep 2, 2025
Gate structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402394B2Aug 26, 2025
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369384B2Jul 22, 2025
Semiconductor device structure including dielectric region with plurality of different oxidation regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148843B2Nov 19, 2024
Semiconductor device with treated interfacial layer on silicon germanium
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908702B2Feb 20, 2024
Gate structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11842927B2Dec 12, 2023
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11710779B2Jul 25, 2023
Semiconductor device including interface layer and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10985265B2Apr 20, 2021
Method for forming semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10971402B2Apr 6, 2021
Semiconductor device including interface layer and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12477784B2Nov 18, 2025
Dipoles in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12426292B2Sep 23, 2025
Semiconductor device with tunable threshold voltage and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12520532B2Jan 6, 2026
Semiconductor devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12490467B2Dec 2, 2025
Transistor and semiconductor device with multiple threshold voltages and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12166074B2Dec 10, 2024
Gate structure in semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12495566B2Dec 9, 2025
Semiconductor device having strained channel and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12513951B2Dec 30, 2025
Gate structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10840350B2Nov 17, 2020
Nanolaminate structure, semiconductor device and method of forming nanolaminate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations34
TAIWAN SEMICONDUCTOR MFG
3 patentsUS8889497B2Nov 18, 2014
Semiconductor devices and methods of manufacture thereof
TAIWAN SEMICONDUCTOR MFG22 citations92
US9153657B2Oct 6, 2015
Semiconductor devices comprising a fin
TAIWAN SEMICONDUCTOR MFG2 citations62
US8853083B2Oct 7, 2014
Chemical mechanical polish in the growth of semiconductor regions
TAIWAN SEMICONDUCTOR MFG0 citations51