Inventor
CHANG CHUN-PO
TW3 patents
Patents
3 patentsUS11495606B2Nov 8, 2022
FinFET having non-merging epitaxially grown source/drains
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10854615B2Dec 1, 2020
FinFET having non-merging epitaxially grown source/drains
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US11646346B2May 9, 2023
Contact structure with air spacer for semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48