P

Inventor

ARAO KOZO

JP42 patents
⚠️ This page may combine multiple inventors who share the name “ARAO KOZO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CANON KK

41 patents
US5244509ASep 14, 1993

Substrate having an uneven surface for solar cell and a solar cell provided with said substrate

CANON KK116 citations98
US6172296B1Jan 9, 2001

Photovoltaic cell

CANON KK63 citations96
US5986204ANov 16, 1999

Photovoltaic cell

CANON KK50 citations96
US5804466ASep 8, 1998

Process for production of zinc oxide thin film, and process for production of semiconductor device substrate and process for production of photoelectric conversion device using the same film

CANON KK74 citations96
US5130103AJul 14, 1992

Method for forming semiconductor crystal and semiconductor crystal article obtained by said method

CANON KK57 citations96
US6464762B1Oct 15, 2002

Aqueous solution for the formation of an indium oxide film by electroless deposition

CANON KK31 citations93
US6258702B1Jul 10, 2001

Method for the formation of a cuprous oxide film and process for the production of a semiconductor device using said method

CANON KK30 citations93
US5800632ASep 1, 1998

Photovoltaic device and method for manufacturing it

CANON KK26 citations93
US5028488AJul 2, 1991

Functional ZnSe1-x Tex :H deposited film

CANON KK27 citations93
US4959106ASep 25, 1990

Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic %

CANON KK49 citations93
US4926229AMay 15, 1990

Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material

CANON KK28 citations93
US4888062ADec 19, 1989

Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic %

CANON KK37 citations93
US4851302AJul 25, 1989

Functional ZnSe:H deposited films

CANON KK32 citations93
US4523803AJun 18, 1985

Optical scanning device

CANON KK51 citations93
US4490450ADec 25, 1984

Photoconductive member

CANON KK38 citations93
US6592739B1Jul 15, 2003

Process and apparatus for forming zinc oxide film, and process and apparatus for producing photovoltaic device

CANON KK51 citations92
US6238808B1May 29, 2001

Substrate with zinc oxide layer, method for producing zinc oxide layer, photovoltaic device, and method for producing photovoltaic device

CANON KK35 citations92
US4629670ADec 16, 1986

Photoconductive film of azulenium salt and electrophotographic photosensitive member

CANON KK29 citations92
US4673630AJun 16, 1987

Photoconductive film and electrophotographic photosensitive member contains azulenium salt

CANON KK27 citations90
US6475367B1Nov 5, 2002

Electrodeposition method

CANON KK19 citations84
US5008726AApr 16, 1991

PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic %

CANON KK21 citations82
US6752915B2Jun 22, 2004

Web conveying apparatus, and apparatus and method for electrodeposition using web conveying apparatus

CANON KK7 citations74
US6544877B1Apr 8, 2003

Method of producing thin film of zinc oxide, process for manufacturing photovoltaic element using its method, and photovoltaic element

CANON KK12 citations74
US6471848B1Oct 29, 2002

Electrodeposition method of forming an oxide film

CANON KK12 citations74
US6383359B2May 7, 2002

Method for forming a zinc oxide layer and method for producing a photovoltaic device

CANON KK11 citations74
US5741615AApr 21, 1998

Light receiving member with non-single-crystal silicon layer containing Cr, Fe, Na, Ni and Mg

CANON KK14 citations74
US4739350AApr 19, 1988

Picture processing unit

CANON KK8 citations74
US4675767AJun 23, 1987

Opto-magnetic recording medium

CANON KK14 citations74
US4664977AMay 12, 1987

Opto-magnetic recording medium

CANON KK16 citations74
US4569894AFeb 11, 1986

Photoconductive member comprising germanium atoms

CANON KK9 citations74
US4532198AJul 30, 1985

Photoconductive member

CANON KK9 citations74
US4517269AMay 14, 1985

Photoconductive member

CANON KK8 citations74
US4453170AJun 5, 1984

Image forming apparatus with vibration compensation

CANON KK15 citations74
US4391512AJul 5, 1983

Developing device using magnetic developer

CANON KK18 citations74
US4337724AJul 6, 1982

Developing device

CANON KK17 citations74
US4337306AJun 29, 1982

Developing method in which a bias is adjustable in accordance with a latent image and an apparatus therefor

CANON KK11 citations74
US4365586ADec 28, 1982

Developing device

CANON KK16 citations73
US6733650B2May 11, 2004

Apparatus and process for producing zinc oxide film

CANON KK3 citations63
US4999260AMar 12, 1991

Magneto-optical recording medium comprising a rare-earth-transition metal dispersed in a dielectric

CANON KK4 citations63
US4617246AOct 14, 1986

Photoconductive member of a Ge-Si layer and Si layer

CANON KK2 citations63
US6632346B2Oct 14, 2003

Process for electrodepositing zinc oxide film

CANON KK1 citations52

CANON KABUSHIKI KASHIA

1 patent