Inventor
ARAO KOZO
JP42 patents
⚠️ This page may combine multiple inventors who share the name “ARAO KOZO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CANON KK
41 patentsUS5244509ASep 14, 1993
Substrate having an uneven surface for solar cell and a solar cell provided with said substrate
CANON KK116 citations98
US6172296B1Jan 9, 2001
Photovoltaic cell
CANON KK63 citations96
US5986204ANov 16, 1999
Photovoltaic cell
CANON KK50 citations96
US5804466ASep 8, 1998
Process for production of zinc oxide thin film, and process for production of semiconductor device substrate and process for production of photoelectric conversion device using the same film
CANON KK74 citations96
US5130103AJul 14, 1992
Method for forming semiconductor crystal and semiconductor crystal article obtained by said method
CANON KK57 citations96
US6464762B1Oct 15, 2002
Aqueous solution for the formation of an indium oxide film by electroless deposition
CANON KK31 citations93
US6258702B1Jul 10, 2001
Method for the formation of a cuprous oxide film and process for the production of a semiconductor device using said method
CANON KK30 citations93
US5800632ASep 1, 1998
Photovoltaic device and method for manufacturing it
CANON KK26 citations93
US5028488AJul 2, 1991
Functional ZnSe1-x Tex :H deposited film
CANON KK27 citations93
US4959106ASep 25, 1990
Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic %
CANON KK49 citations93
US4926229AMay 15, 1990
Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material
CANON KK28 citations93
US4888062ADec 19, 1989
Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic %
CANON KK37 citations93
US4851302AJul 25, 1989
Functional ZnSe:H deposited films
CANON KK32 citations93
US4523803AJun 18, 1985
Optical scanning device
CANON KK51 citations93
US4490450ADec 25, 1984
Photoconductive member
CANON KK38 citations93
US6592739B1Jul 15, 2003
Process and apparatus for forming zinc oxide film, and process and apparatus for producing photovoltaic device
CANON KK51 citations92
US6238808B1May 29, 2001
Substrate with zinc oxide layer, method for producing zinc oxide layer, photovoltaic device, and method for producing photovoltaic device
CANON KK35 citations92
US4629670ADec 16, 1986
Photoconductive film of azulenium salt and electrophotographic photosensitive member
CANON KK29 citations92
US4673630AJun 16, 1987
Photoconductive film and electrophotographic photosensitive member contains azulenium salt
CANON KK27 citations90
US6475367B1Nov 5, 2002
Electrodeposition method
CANON KK19 citations84
US5008726AApr 16, 1991
PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic %
CANON KK21 citations82
US6752915B2Jun 22, 2004
Web conveying apparatus, and apparatus and method for electrodeposition using web conveying apparatus
CANON KK7 citations74
US6544877B1Apr 8, 2003
Method of producing thin film of zinc oxide, process for manufacturing photovoltaic element using its method, and photovoltaic element
CANON KK12 citations74
US6471848B1Oct 29, 2002
Electrodeposition method of forming an oxide film
CANON KK12 citations74
US6383359B2May 7, 2002
Method for forming a zinc oxide layer and method for producing a photovoltaic device
CANON KK11 citations74
US5741615AApr 21, 1998
Light receiving member with non-single-crystal silicon layer containing Cr, Fe, Na, Ni and Mg
CANON KK14 citations74
US4739350AApr 19, 1988
Picture processing unit
CANON KK8 citations74
US4675767AJun 23, 1987
Opto-magnetic recording medium
CANON KK14 citations74
US4664977AMay 12, 1987
Opto-magnetic recording medium
CANON KK16 citations74
US4569894AFeb 11, 1986
Photoconductive member comprising germanium atoms
CANON KK9 citations74
US4532198AJul 30, 1985
Photoconductive member
CANON KK9 citations74
US4517269AMay 14, 1985
Photoconductive member
CANON KK8 citations74
US4453170AJun 5, 1984
Image forming apparatus with vibration compensation
CANON KK15 citations74
US4391512AJul 5, 1983
Developing device using magnetic developer
CANON KK18 citations74
US4337724AJul 6, 1982
Developing device
CANON KK17 citations74
US4337306AJun 29, 1982
Developing method in which a bias is adjustable in accordance with a latent image and an apparatus therefor
CANON KK11 citations74
US4365586ADec 28, 1982
Developing device
CANON KK16 citations73
US6733650B2May 11, 2004
Apparatus and process for producing zinc oxide film
CANON KK3 citations63
US4999260AMar 12, 1991
Magneto-optical recording medium comprising a rare-earth-transition metal dispersed in a dielectric
CANON KK4 citations63
US4617246AOct 14, 1986
Photoconductive member of a Ge-Si layer and Si layer
CANON KK2 citations63
US6632346B2Oct 14, 2003
Process for electrodepositing zinc oxide film
CANON KK1 citations52