Inventor
SONODA TAKUJI
JP16 patents
Patents
16 patentsUS5679603AOct 21, 1997
Method of making semiconductor device including high resistivity layer
MITSUBISHI ELECTRIC CORP21 citations92
US5362677ANov 8, 1994
Method for producing a field effect transistor with a gate recess structure
MITSUBISHI ELECTRIC CORP24 citations92
US5288654AFeb 22, 1994
Method of making a mushroom-shaped gate electrode of semiconductor device
MITSUBISHI ELECTRIC CORP33 citations92
US5250822AOct 5, 1993
Field effect transistor
MITSUBISHI ELECTRIC CORP22 citations92
US5032541AJul 16, 1991
Method of producing a semiconductor device including a Schottky gate
MITSUBISHI ELECTRIC CORP44 citations92
US5711813AJan 27, 1998
Epitaxial crystal growth apparatus
MITSUBISHI ELECTRIC CORP38 citations91
US5285087AFeb 8, 1994
Heterojunction field effect transistor
MITSUBISHI ELECTRIC CORP29 citations91
US5760457AJun 2, 1998
Bipolar transistor circuit element having base ballasting resistor
MITSUBISHI ELECTRIC CORP18 citations83
US4984036AJan 8, 1991
Field effect transistor with multiple grooves
MITSUBISHI ELECTRIC CORP18 citations82
US5139968AAug 18, 1992
Method of producing a t-shaped gate electrode
MITSUBISHI ELECTRIC CORP21 citations80
US5428224AJun 27, 1995
Field effect transistor
MITSUBISHI ELECTRIC CORP12 citations74
US5365078ANov 15, 1994
Semiconductor device and method of making it
MITSUBISHI ELECTRIC CORP14 citations74
US4967242AOct 30, 1990
Heterojunction field effect transistor
MITSUBISHI ELECTRIC CORP9 citations74
US5220186AJun 15, 1993
Semiconductor device with a mushroom-shaped gate electrode
MITSUBISHI ELECTRIC CORP5 citations73
US5185534AFeb 9, 1993
Monolithic parallel connected transistor structure
MITSUBISHI ELECTRIC CORP13 citations73
US5045497ASep 3, 1991
Method of making a schottky electrode
MITSUBISHI ELECTRIC CORP4 citations63