P

Inventor

OHASHI HIROMICHI

JP46 patents
⚠️ This page may combine multiple inventors who share the name “OHASHI HIROMICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

33 patents
US6750508B2Jun 15, 2004

Power semiconductor switching element provided with buried electrode

TOSHIBA KK190 citations99
US6037632AMar 14, 2000

Semiconductor device

TOSHIBA KK293 citations99
US6933544B2Aug 23, 2005

Power semiconductor device

TOSHIBA KK72 citations98
US6153896ANov 28, 2000

Semiconductor device and control method thereof

TOSHIBA KK97 citations97
US4672407AJun 9, 1987

Conductivity modulated MOSFET

TOSHIBA KK83 citations97
US6940090B2Sep 6, 2005

Wideband gap having a low on-resistance and having a high avalanche capability

TOSHIBA KK43 citations96
US5747926AMay 5, 1998

Ferroelectric cold cathode

TOSHIBA KK72 citations96
US4928155AMay 22, 1990

Lateral conductivity modulated MOSFET

TOSHIBA KK54 citations96
US4782372ANov 1, 1988

Lateral conductivity modulated MOSFET

TOSHIBA KK33 citations96
US4738935AApr 19, 1988

Method of manufacturing compound semiconductor apparatus

TOSHIBA KK53 citations96
US7238576B2Jul 3, 2007

Semiconductor device and method of manufacturing the same

TOSHIBA KK30 citations93
US5977693ANov 2, 1999

Micro-vacuum device

TOSHIBA KK22 citations93
US5714775AFeb 3, 1998

Power semiconductor device

TOSHIBA KK36 citations93
US4689647AAug 25, 1987

Conductivity modulated field effect switch with optimized anode emitter and anode base impurity concentrations

TOSHIBA KK39 citations93
US6534998B1Mar 18, 2003

Semiconductor device and control method thereof

TOSHIBA KK16 citations92
US6057636AMay 2, 2000

Micro power switch using a cold cathode and a driving method thereof

TOSHIBA KK42 citations92
US5286984AFeb 15, 1994

Conductivity modulated MOSFET

TOSHIBA KK27 citations92
US5093701AMar 3, 1992

Conductivity modulated mosfet

TOSHIBA KK22 citations92
US4717940AJan 5, 1988

MIS controlled gate turn-off thyristor

TOSHIBA KK32 citations92
US4700466AOct 20, 1987

Method of manufacturing semiconductor device wherein silicon substrates are bonded together

TOSHIBA KK27 citations92
US6323717B1Nov 27, 2001

Semiconductor device, drive method, and drive apparatus

TOSHIBA KK46 citations91
US5006921AApr 9, 1991

Power semiconductor switching apparatus with heat sinks

TOSHIBA KK25 citations88
US7531871B2May 12, 2009

Power semiconductor switching element

TOSHIBA KK8 citations84
US7244974B2Jul 17, 2007

wideband gap power semiconductor device having a low on-resistance and having a high avalanche capability used for power control

TOSHIBA KK13 citations84
US7067870B2Jun 27, 2006

Power semiconductor switching element

TOSHIBA KK12 citations84
US6025622AFeb 15, 2000

Conductivity modulated MOSFET

TOSHIBA KK14 citations82
US5086323AFeb 4, 1992

Conductivity modulated mosfet

TOSHIBA KK18 citations82
US4881120ANov 14, 1989

Conductive modulated MOSFET

TOSHIBA KK16 citations82
US7102179B2Sep 5, 2006

Power semiconductor device used for power control

TOSHIBA KK8 citations74
US5780887AJul 14, 1998

Conductivity modulated MOSFET

TOSHIBA KK3 citations74
US4791470ADec 13, 1988

Reverse conducting gate turn-off thyristor device

TOSHIBA KK17 citations72
US5028974AJul 2, 1991

Semiconductor switching device with anode shortening structure

TOSHIBA KK19 citations70
US5212396AMay 18, 1993

Conductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrations

TOSHIBA KK6 citations63

TOKYO SHIBAURA ELECTRIC CO

4 patents

NITTO DENKO CORP

4 patents

NAT INST OF ADVANCED IND SCIEN

2 patents

OHASHI HIROMICHI

2 patents

NAT INST ADVANCED IND SCIENCE & TECH

1 patent