Inventor
CHENG JUNG-CHIEN
TW27 patents
Patents
27 patentsUS11462612B2Oct 4, 2022
Semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11527534B2Dec 13, 2022
Gap-insulated semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US12300723B2May 13, 2025
Transistor including downward extending silicide
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations74
US11996410B2May 28, 2024
Gap-insulated semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855079B2Dec 26, 2023
Integrated circuit with backside trench for metal gate definition
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11855078B2Dec 26, 2023
Semiconductor device structure including forksheet transistors and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11710737B2Jul 25, 2023
Hybrid semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12183799B2Dec 31, 2024
Semiconductor device with gate isolation features and fabrication method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11876119B2Jan 16, 2024
Semiconductor device with gate isolation features and fabrication method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12598787B2Apr 7, 2026
Field effect transistor with dual layer isolation structure and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12464750B2Nov 4, 2025
Semiconductor device and formation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402407B2Aug 26, 2025
Gap-insulated semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12389643B2Aug 12, 2025
Semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12376365B2Jul 29, 2025
Nanosheet devices with hybrid structures and methods of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12324229B2Jun 3, 2025
Semiconductor device structure including forksheet transistors and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302630B2May 13, 2025
Integrated circuit with backside trench for metal gate definition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12249621B2Mar 11, 2025
Semiconductor structure with dielectric fin feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12170279B2Dec 17, 2024
Hybrid semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12125877B2Oct 22, 2024
Nanostructure field-effect transistor device with dielectric layer for reducing substrate leakage or well isolation leakage and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12094950B2Sep 17, 2024
Nanostructures and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009261B2Jun 11, 2024
Nanosheet devices with hybrid structures and methods of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855138B2Dec 26, 2023
Semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11670550B2Jun 6, 2023
Nanostructure field-effect transistor device and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11538927B2Dec 27, 2022
Nanostructures and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12464812B2Nov 4, 2025
Semiconductor device structure including forksheet transistors and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12300719B2May 13, 2025
Structure and formation method of semiconductor device with isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12107087B2Oct 1, 2024
Semiconductor device with gate isolation structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52