Inventor

JU SHI NING

TW250 patents

⚠️ This page may combine multiple inventors who share the name “JU SHI NING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JU SHI NING

TAIWAN SEMICONDUCTOR MFG CO LTD

Capacitance reduction for back-side power rail device

Multi-gate device and related methods

Integrated circuits with backside power rails

Semiconductor device and manufacturing method thereof

Gate isolation for multigate device

Semiconductor device structure

Method for manufacturing a FinFET device with a backside power rail and a backside self-aligned via by etching an extended source trench

Semiconductor devices with backside power rail and backside self-aligned via

Uniform gate width for nanostructure devices

Backside power rail structure and methods of forming same

Integrated circuits with buried interconnect conductors

Self-aligned structure for semiconductor devices

Buried power rail and method forming same

Gap-insulated semiconductor device

Semiconductor device with backside self-aligned power rail and methods of forming the same

Fin structures having varied fin heights for semiconductor device

Semiconductor device and method of fabrication thereof

Semiconductor device structure and method for forming the same

Semiconductor device and manufacturing method thereof

Method for manufacturing semiconductor device

Semiconductor device

Buried interconnect conductor

Hybrid scheme for improved performance for P-type and N-type FinFETs

System and method for widening Fin widths for small pitch FinFET devices

Gate isolation for multigate device

Capacitance reduction for back-side power rail device

Gate-all-around field-effect transistor device

Uniform gate width for nanostructure devices

Integration of silicon channel nanostructures and silicon-germanium channel nanostructures

Transistor including downward extending silicide

Multi-layer channel structures and methods of fabricating the same in field-effect transistors preliminary class

Self-aligned metal gate for multigate device

Semiconductor devices with backside power rail and backside self-aligned via

Gap-insulated semiconductor device

Semiconductor device with backside self-aligned power rail and methods of forming the same

Integrated circuit with backside trench for metal gate definition

Semiconductor device structure including forksheet transistors and methods of forming the same

Backside power rail structure and methods of forming same

Isolation structures and methods of forming the same in field-effect transistors

Semiconductor device structure and methods of forming the same

Integrated circuits with backside power rails

Fin-like field effect transistor patterning methods for achieving fin width uniformity

Hybrid semiconductor device

Method for forming semiconductor device structure

Self-aligned metal gate for multigate device

TAIWAN SEMICONDUCTOR MFG

Source/drain stack stressor for semiconductor device

Fin recess last process for FinFET fabrication

Semiconductor devices and methods of manufacture thereof

CMOS device and method of forming the same

CHING KUO-CHENG

CMOS device and method of forming the same