Inventor
LIOU FU-TAI
US72 patents
⚠️ This page may combine multiple inventors who share the name “LIOU FU-TAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SGS THOMSON MICROELECTRONICS
32 patentsUS5130268AJul 14, 1992
Method for forming planarized shallow trench isolation in an integrated circuit and a structure formed thereby
SGS THOMSON MICROELECTRONICS138 citations99
US5658828AAug 19, 1997
Method for forming an aluminum contact through an insulating layer
SGS THOMSON MICROELECTRONICS49 citations96
US5410176AApr 25, 1995
Integrated circuit with planarized shallow trench isolation
SGS THOMSON MICROELECTRONICS91 citations96
US5270254ADec 14, 1993
Integrated circuit metallization with zero contact enclosure requirements and method of making the same
SGS THOMSON MICROELECTRONICS51 citations96
US5108951AApr 28, 1992
Method for forming a metal contact
SGS THOMSON MICROELECTRONICS80 citations96
US5371041ADec 6, 1994
Method for forming a contact/VIA
SGS THOMSON MICROELECTRONICS45 citations94
US4962414AOct 9, 1990
Method for forming a contact VIA
SGS THOMSON MICROELECTRONICS103 citations94
US5593921AJan 14, 1997
Method of forming vias
SGS THOMSON MICROELECTRONICS37 citations93
US5424571AJun 13, 1995
Sloped spacer for mos field effect devices
SGS THOMSON MICROELECTRONICS20 citations93
US5391520AFeb 21, 1995
Method for forming local interconnect for integrated circuits
SGS THOMSON MICROELECTRONICS22 citations93
US5371410ADec 6, 1994
Integrated circuit metallization with zero contact enclosure requirements
SGS THOMSON MICROELECTRONICS26 citations93
US5234852AAug 10, 1993
Sloped spacer for MOS field effect devices comprising reflowable glass layer
SGS THOMSON MICROELECTRONICS27 citations93
US5124280AJun 23, 1992
Local interconnect for integrated circuits
SGS THOMSON MICROELECTRONICS35 citations93
US5057463AOct 15, 1991
Thin oxide structure and method
SGS THOMSON MICROELECTRONICS42 citations93
US4886764ADec 12, 1989
Process for making refractory metal silicide cap for protecting multi-layer polycide structure
SGS THOMSON MICROELECTRONICS41 citations93
US4771014ASep 13, 1988
Process for manufacturing LDD CMOS devices
SGS THOMSON MICROELECTRONICS52 citations93
US5462894AOct 31, 1995
Method for fabricating a polycrystalline silicon resistive load element in an integrated circuit
SGS THOMSON MICROELECTRONICS37 citations91
US5246883ASep 21, 1993
Semiconductor contact via structure and method
SGS THOMSON MICROELECTRONICS22 citations91
US5162884ANov 10, 1992
Insulated gate field-effect transistor with gate-drain overlap and method of making the same
SGS THOMSON MICROELECTRONICS99 citations91
US5070391ADec 3, 1991
Semiconductor contact via structure and method
SGS THOMSON MICROELECTRONICS31 citations91
US5059554AOct 22, 1991
Method for forming polycrystalline silicon contacts
SGS THOMSON MICROELECTRONICS56 citations91
US5319245AJun 7, 1994
Local interconnect for integrated circuits
SGS THOMSON MICROELECTRONICS16 citations82
US4981813AJan 1, 1991
Pad oxide protect sealed interface isolation process
SGS THOMSON MICROELECTRONICS20 citations82
US4978637ADec 18, 1990
Local interconnect process for integrated circuits
SGS THOMSON MICROELECTRONICS20 citations82
US5349229ASep 20, 1994
Local interconnect for integrated circuits
SGS THOMSON MICROELECTRONICS15 citations74
US5256895AOct 26, 1993
Pad oxide protect sealed interface isolation
SGS THOMSON MICROELECTRONICS15 citations74
US4933304AJun 12, 1990
Method for reducing the surface reflectance of a metal layer during semiconductor processing
SGS THOMSON MICROELECTRONICS18 citations74
US4863562ASep 5, 1989
Method for forming a non-planar structure on the surface of a semiconductor substrate
SGS THOMSON MICROELECTRONICS12 citations74
US5286672AFeb 15, 1994
Method for forming field oxide regions
SGS THOMSON MICROELECTRONICS11 citations73
US5268325ADec 7, 1993
Method for fabricating a polycrystalline silicon resistive load element in an integrated circuit
SGS THOMSON MICROELECTRONICS8 citations73
US5146309ASep 8, 1992
Method for forming polycrystalline silicon contacts
SGS THOMSON MICROELECTRONICS9 citations73
US5068201ANov 26, 1991
Method for forming a high valued resistive load element and low resistance interconnect for integrated circuits
SGS THOMSON MICROELECTRONICS8 citations73
ST MICROELECTRONICS INC
8 patentsUS6111319AAug 29, 2000
Method of forming submicron contacts and vias in an integrated circuit
ST MICROELECTRONICS INC51 citations96
US5841195ANov 24, 1998
Semiconductor contact via structure
ST MICROELECTRONICS INC45 citations94
US6033980AMar 7, 2000
Method of forming submicron contacts and vias in an integrated circuit
ST MICROELECTRONICS INC40 citations92
US5847460ADec 8, 1998
Submicron contacts and vias in an integrated circuit
ST MICROELECTRONICS INC36 citations92
US6271137B1Aug 7, 2001
Method of producing an aluminum stacked contact/via for multilayer
ST MICROELECTRONICS INC16 citations84
US6180517B1Jan 30, 2001
Method of forming submicron contacts and vias in an integrated circuit
ST MICROELECTRONICS INC11 citations74
US5976969ANov 2, 1999
Method for forming an aluminum contact
ST MICROELECTRONICS INC11 citations74
US5847465ADec 8, 1998
Contacts for semiconductor devices
ST MICROELECTRONICS INC13 citations74
UNITED MICROELECTRONICS CORP
6 patentsUS6031293AFeb 29, 2000
Package-free bonding pad structure
UNITED MICROELECTRONICS CORP88 citations98
US6140198AOct 31, 2000
Method of fabricating load resistor
UNITED MICROELECTRONICS CORP25 citations93
US6017790AJan 25, 2000
Method of manufacturing embedded dynamic random access memory
UNITED MICROELECTRONICS CORP42 citations93
US6320254B1Nov 20, 2001
Plug structure
UNITED MICROELECTRONICS CORP25 citations92
US6171899B1Jan 9, 2001
Method for fabricating a capacitor
UNITED MICROELECTRONICS CORP11 citations74
US6156634ADec 5, 2000
Method of fabricating local interconnect
UNITED MICROELECTRONICS CORP9 citations74
VOLTAFIELD TECHNOLOGY CORP
1 patentLIOU FU-TAI
1 patentVOLTAFIELD TECH CORP
1 patentFU NAI-CHUNG
1 patentShowing the top 50 of 72 patents by PatentIndex Score.