P

Inventor

LIOU FU-TAI

US72 patents
⚠️ This page may combine multiple inventors who share the name “LIOU FU-TAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SGS THOMSON MICROELECTRONICS

32 patents
US5130268AJul 14, 1992

Method for forming planarized shallow trench isolation in an integrated circuit and a structure formed thereby

SGS THOMSON MICROELECTRONICS138 citations99
US5658828AAug 19, 1997

Method for forming an aluminum contact through an insulating layer

SGS THOMSON MICROELECTRONICS49 citations96
US5410176AApr 25, 1995

Integrated circuit with planarized shallow trench isolation

SGS THOMSON MICROELECTRONICS91 citations96
US5270254ADec 14, 1993

Integrated circuit metallization with zero contact enclosure requirements and method of making the same

SGS THOMSON MICROELECTRONICS51 citations96
US5108951AApr 28, 1992

Method for forming a metal contact

SGS THOMSON MICROELECTRONICS80 citations96
US5371041ADec 6, 1994

Method for forming a contact/VIA

SGS THOMSON MICROELECTRONICS45 citations94
US4962414AOct 9, 1990

Method for forming a contact VIA

SGS THOMSON MICROELECTRONICS103 citations94
US5593921AJan 14, 1997

Method of forming vias

SGS THOMSON MICROELECTRONICS37 citations93
US5424571AJun 13, 1995

Sloped spacer for mos field effect devices

SGS THOMSON MICROELECTRONICS20 citations93
US5391520AFeb 21, 1995

Method for forming local interconnect for integrated circuits

SGS THOMSON MICROELECTRONICS22 citations93
US5371410ADec 6, 1994

Integrated circuit metallization with zero contact enclosure requirements

SGS THOMSON MICROELECTRONICS26 citations93
US5234852AAug 10, 1993

Sloped spacer for MOS field effect devices comprising reflowable glass layer

SGS THOMSON MICROELECTRONICS27 citations93
US5124280AJun 23, 1992

Local interconnect for integrated circuits

SGS THOMSON MICROELECTRONICS35 citations93
US5057463AOct 15, 1991

Thin oxide structure and method

SGS THOMSON MICROELECTRONICS42 citations93
US4886764ADec 12, 1989

Process for making refractory metal silicide cap for protecting multi-layer polycide structure

SGS THOMSON MICROELECTRONICS41 citations93
US4771014ASep 13, 1988

Process for manufacturing LDD CMOS devices

SGS THOMSON MICROELECTRONICS52 citations93
US5462894AOct 31, 1995

Method for fabricating a polycrystalline silicon resistive load element in an integrated circuit

SGS THOMSON MICROELECTRONICS37 citations91
US5246883ASep 21, 1993

Semiconductor contact via structure and method

SGS THOMSON MICROELECTRONICS22 citations91
US5162884ANov 10, 1992

Insulated gate field-effect transistor with gate-drain overlap and method of making the same

SGS THOMSON MICROELECTRONICS99 citations91
US5070391ADec 3, 1991

Semiconductor contact via structure and method

SGS THOMSON MICROELECTRONICS31 citations91
US5059554AOct 22, 1991

Method for forming polycrystalline silicon contacts

SGS THOMSON MICROELECTRONICS56 citations91
US5319245AJun 7, 1994

Local interconnect for integrated circuits

SGS THOMSON MICROELECTRONICS16 citations82
US4981813AJan 1, 1991

Pad oxide protect sealed interface isolation process

SGS THOMSON MICROELECTRONICS20 citations82
US4978637ADec 18, 1990

Local interconnect process for integrated circuits

SGS THOMSON MICROELECTRONICS20 citations82
US5349229ASep 20, 1994

Local interconnect for integrated circuits

SGS THOMSON MICROELECTRONICS15 citations74
US5256895AOct 26, 1993

Pad oxide protect sealed interface isolation

SGS THOMSON MICROELECTRONICS15 citations74
US4933304AJun 12, 1990

Method for reducing the surface reflectance of a metal layer during semiconductor processing

SGS THOMSON MICROELECTRONICS18 citations74
US4863562ASep 5, 1989

Method for forming a non-planar structure on the surface of a semiconductor substrate

SGS THOMSON MICROELECTRONICS12 citations74
US5286672AFeb 15, 1994

Method for forming field oxide regions

SGS THOMSON MICROELECTRONICS11 citations73
US5268325ADec 7, 1993

Method for fabricating a polycrystalline silicon resistive load element in an integrated circuit

SGS THOMSON MICROELECTRONICS8 citations73
US5146309ASep 8, 1992

Method for forming polycrystalline silicon contacts

SGS THOMSON MICROELECTRONICS9 citations73
US5068201ANov 26, 1991

Method for forming a high valued resistive load element and low resistance interconnect for integrated circuits

SGS THOMSON MICROELECTRONICS8 citations73

ST MICROELECTRONICS INC

8 patents

UNITED MICROELECTRONICS CORP

6 patents

VOLTAFIELD TECHNOLOGY CORP

1 patent

LIOU FU-TAI

1 patent

VOLTAFIELD TECH CORP

1 patent

FU NAI-CHUNG

1 patent

Showing the top 50 of 72 patents by PatentIndex Score.