Inventor
WOODALL JERRY M
US64 patents
⚠️ This page may combine multiple inventors who share the name “WOODALL JERRY M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
40 patentsUS5471948ADec 5, 1995
Method of making a compound semiconductor having metallic inclusions
IBM242 citations98
US5371399ADec 6, 1994
Compound semiconductor having metallic inclusions and devices fabricated therefrom
IBM237 citations98
US5021365AJun 4, 1991
Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning
IBM59 citations96
US4358291ANov 9, 1982
Solid state renewable energy supply
IBM73 citations96
US4316048AFeb 16, 1982
Energy conversion
IBM57 citations96
US4295002AOct 13, 1981
Heterojunction V-groove multijunction solar cell
IBM141 citations96
US5221367AJun 22, 1993
Strained defect-free epitaxial mismatched heterostructures and method of fabrication
IBM63 citations95
US5019530AMay 28, 1991
Method of making metal-insulator-metal junction structures with adjustable barrier heights
IBM75 citations95
US4801984AJan 31, 1989
Semiconductor ohmic contact
IBM34 citations93
US5508829AApr 16, 1996
LTG AlGaAs non-linear optical material and devices fabricated therefrom
IBM42 citations92
US5098859AMar 24, 1992
Method for forming distributed barrier compound semiconductor contacts
IBM36 citations92
US5121181AJun 9, 1992
Resonant tunneling photodetector for long wavelength applications
IBM23 citations91
US4811077AMar 7, 1989
Compound semiconductor surface termination
IBM49 citations91
US4807006AFeb 21, 1989
Heterojunction interdigitated schottky barrier photodetector
IBM29 citations91
US4550257AOct 29, 1985
Narrow line width pattern fabrication
IBM34 citations91
US4477721AOct 16, 1984
Electro-optic signal conversion
IBM36 citations90
US4843450AJun 27, 1989
Compound semiconductor interface control
IBM21 citations82
US4352117ASep 28, 1982
Electron source
IBM25 citations82
US4312681AJan 26, 1982
Annealing of ion implanted III-V compounds in the presence of another III-V
IBM28 citations82
US4920069AApr 24, 1990
Submicron dimension compound semiconductor fabrication using thermal etching
IBM19 citations81
US4354198AOct 12, 1982
Zinc-sulphide capping layer for gallium-arsenide device
IBM23 citations81
US4745204AMay 17, 1988
Process for producing aluminum alkoxide or aluminum aryloxide
IBM20 citations80
US4366493ADec 28, 1982
Semiconductor ballistic transport device
IBM22 citations80
US4351706ASep 28, 1982
Electrochemically eroding semiconductor device
IBM26 citations78
US3963539AJun 15, 1976
Two stage heteroepitaxial deposition process for GaAsP/Si LED's
IBM23 citations78
US4849802AJul 18, 1989
Thermally stable low resistance contact
IBM11 citations74
US4751708AJun 14, 1988
Semiconductor injection lasers
IBM10 citations74
US4550489ANov 5, 1985
Heterojunction semiconductor
IBM9 citations74
US4532533AJul 30, 1985
Ballistic conduction semiconductor device
IBM8 citations74
US4525731AJun 25, 1985
Semiconductor conversion of optical-to-electrical energy
IBM8 citations74
US4504846AMar 12, 1985
Multiwavelength optical-to-electrical logic operations
IBM7 citations74
US4460910AJul 17, 1984
Heterojunction semiconductor
IBM15 citations74
US4448487AMay 15, 1984
Photon energy conversion
IBM11 citations74
US4379005AApr 5, 1983
Semiconductor device fabrication
IBM17 citations74
US4276137AJun 30, 1981
Control of surface recombination loss in solar cells
IBM11 citations74
US4202704AMay 13, 1980
Optical energy conversion
IBM16 citations74
US4860067AAug 22, 1989
Semiconductor heterostructure adapted for low temperature operation
IBM12 citations73
US4757369AJul 12, 1988
Group III-V semiconductor electrical contact
IBM9 citations73
US4472206ASep 18, 1984
Method of activating implanted impurities in broad area compound semiconductors by short time contact annealing
IBM7 citations73
US4426237AJan 17, 1984
Volatile metal oxide suppression in molecular beam epitaxy systems
IBM10 citations73
WOODALL JERRY M
7 patentsUS9624103B1Apr 18, 2017
Method and system for continuously producing hydrogen, heat and aluminum oxides on-demand
WOODALL JERRY M25 citations93
US8080233B2Dec 20, 2011
Power generation from solid aluminum
WOODALL JERRY M27 citations90
US9780398B1Oct 3, 2017
Selectively locatable power generation system employing a water splitting process
WOODALL JERRY M7 citations83
US9731967B1Aug 15, 2017
System for continuously producing hydrogen, heat and aluminum oxides on demand
WOODALL JERRY M8 citations83
US10594249B1Mar 17, 2020
Photovoltaic-phase change battery system for converting intermittent solar power into day and night electric power
WOODALL JERRY M5 citations72
US9718684B1Aug 1, 2017
Method for continuously producing hydrogen, heat and aluminum oxides on demand
WOODALL JERRY M2 citations72
US9580310B1Feb 28, 2017
Method and apparatus for producing hydrogen and aluminum oxide from solid aluminum
WOODALL JERRY M2 citations72
PURDUE RESEARCH FOUNDATION
2 patentsUNIV YALE
1 patentShowing the top 50 of 64 patents by PatentIndex Score.