Inventor

DIENY BERNARD

US76 patents

⚠️ This page may combine multiple inventors who share the name “DIENY BERNARD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DIENY BERNARD

COMMISSARIAT ENERGIE ATOMIQUE

Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device

Three-layered stacked magnetic spin polarization device with memory

Magnetic spin polarization and magnetization rotation device with memory and writing process, using such a device

Giant magnetoresistance, production process and application to a magnetic sensor

Thin-film magnetic device with strong spin polarization perpendicular to the plane of the layers, magnetic tunnel junction and spin valve using such a device

Self biased multilayer magnetoresistance sensor

Magnetoresistor with tunnel effect and magnetic sensor using same

Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconducting layer alternatively of magnetic material

Multi-layer structure and sensor and manufacturing process

Magnetic device having perpendicular magnetization and interaction compensating interlayer

Magnetic tunnel junction magnetic memory

Magnetoresistive device

Hybrid non-volatile memory device and method for manufacturing such a device

Magnetic element with thermally-assisted writing

Magnetic tunnel junction device and writing/reading for said device

Method for manufacturing a resistive device for a memory or logic circuit

Magnetic tunnel junction with perpendicular shape anisotropy and minimised variation of temperature memory point and logic element including the magnetic tunnel junction, method of manufacturing the magnetic tunnel junction

Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising such a stack

Synthetic antiferromagnetic layer, magnetic tunnel junction and spintronic device using said synthetic antiferromagnetic layer

Magnetic device with thermally-assisted switching

IBM

Dual spin valve magnetoresistive sensor

Magnetoresistive sensor based on the spin valve effect

Magnetoresistive sensor based on the spin valve effect

Antiferromagnetic exchange coupling in magnetoresistive spin valve sensors

Magnetoresistive sensor having multilayer thin film structure

Current biased magnetoresistive spin valve sensor

Magnetoresistive sensor having multilayer thin film structure

HEADWAY TECHNOLOGIES INC

Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads

GMR configuration with enhanced spin filtering

GMR configuration with enhanced spin filtering

Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads

Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads

Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads

DIENY BERNARD

Spin polarised magnetic device

Heat assisted magnetic write element

Low noise magnetic field sensor using a lateral spin transfer

Spin-valve or tunnel-junction radio-frequency oscillator, process for adjusting the frequency of such an oscillator and network consisting of a plurality of such oscillators

Magnetic device with exchange bias

Thermally assisted magnetic writing device

CROCUS TECHNOLOGY SA

Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal

Magnetic element having an improved measurement range

Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal

RODMACQ BERNARD

Magnetic multilayer device, method for producing such a device, magnetic field sensor, magnetic memory and logic gate using such a device

Three-layer magnetic element, magnetic field sensor, magnetic memory and magnetic logic gate using such an element

SILICON MAGNETIC SYSTEMS

High density MRAM using thermal writing

CENTRE NAT RECH SCIENT

Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same

NOZIERES JEAN-PIERRE

Magnetic element with a fast spin transfer torque writing procedure

COMISSARIAT A L EN ATOMIQUE ET

Magnetoresistive tunnel junction magnetic device and its application to MRAM

VIALA BERNARD

Method for producing a magnetic tunnel junction and magnetic tunnel junction thus obtained

FIRASTRAU IOANA

Spin-transfer torque oscillator