Inventor

EDMOND JOHN A

US49 patents

⚠️ This page may combine multiple inventors who share the name “EDMOND JOHN A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

EDMOND JOHN A

CREE INC

Nickel tin bonding system with barrier layer for semiconductor wafers and devices

External extraction light emitting diode based upon crystallographic faceted surfaces

Light emitting diodes including barrier layers/sublayers

Double heterojunction light emitting diode with gallium nitride active layer

Methods of manufacturing light emitting diodes including barrier layers/sublayers

Robust group III light emitting diode for high reliability in standard packaging applications

LED chip

Chip with integrated phosphor

Solid state lamp with light directing optics and diffuser

Light emitting diode with metal coupling structure

External extraction light emitting diode based upon crystallographic faceted surfaces

Modified gold-tin system with increased melting temperature for wafer bonding

Light emitting diode with degenerate coupling structure

Light emitting diodes including current spreading layer and barrier sublayers

Light emitter components, systems, and related methods

Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices

CREE RESEARCH INC

Double heterojunction light emitting diode with gallium nitride active layer

Silicon carbide thyristor

Blue light-emitting diode with high external quantum efficiency

Blue light emitting diode formed in silicon carbide

Method of production of light emitting diodes

Method of preparing silicon carbide surfaces for crystal growth

Blue light emitting diode formed in silicon carbide

Method of forming green light emitting diode in silicon carbide

Low-strain laser structures with group III nitride active layers

Vertical geometry light emitting diode with group III nitride active layer and extended lifetime

Blue light-emitting diode with degenerate junction structure

Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices

Fast recovery high temperature rectifying diode formed in silicon carbide

System and method for accelerated degradation testing of semiconductor devices

EDMOND JOHN A

Reflective mounting substrates for light emitting diodes

LED chip

Light emitting devices, systems, and methods

Transparent ohmic contacts on light emitting diodes with growth substrates

Transparent ohmic contacts on light emitting diodes with carrier substrates

UNIV NORTH CAROLINA STATE

Bipolar junction transistor on silicon carbide

Implantation and electrical activation of dopants into monocrystalline silicon carbide

P-N junction diodes in silicon carbide

LOWES THEODORE

LED package

LED package

LED package

SLATER JR DAVID B

Nickel tin bonding system for semiconductor wafers and devices

Light emitting diodes including barrier layers/sublayers and manufacturing methods therefor

Light emitting diodes including barrier sublayers

GEN ELECTRIC

Silicon carbide photodiode with improved short wavelength response and very low leakage current

CREE RESEARCH

High sensitivity ultraviolet radiation detector

BERGMANN MICHAEL

LED structure with enhanced mirror reflectivity

GEN INSTRUMENT CORP

Packaged diode for high temperature operation

DONOFRIO MATTHEW

Nickel tin bonding system with barrier layer for semiconductor wafers and devices