Inventor

PALMOUR JOHN W

US39 patents

⚠️ This page may combine multiple inventors who share the name “PALMOUR JOHN W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PALMOUR JOHN W

CREE RESEARCH INC

Process for reducing defects in oxide layers on silicon carbide

Silicon carbide metal-insulator semiconductor field effect transistor

Silicon carbide metal-insulator semiconductor field effect transistor

Silicon carbide thyristor

Power MOSFET in silicon carbide

High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide

Method of preparing silicon carbide surfaces for crystal growth

Latch-up free power MOS-bipolar transistor

Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion

Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate

Junction field-effect transistor formed in silicon carbide

Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures

Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures

Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures

Method of forming platinum ohmic contact to p-type silicon carbide

Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures

Silicon carbide field controlled bipolar switch

CREE INC

Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel

Method of N2O growth of an oxide layer on a silicon carbide layer

Silicon carbide metal-semiconductor field effect transistors

Methods of fabricating silicon carbide power devices by controlled annealing

Silicon carbide CMOS devices

Methods of fabricating high voltage, high temperature capacitor and interconnection structures

High voltage, high temperature capacitor and interconnection structures

Large area silicon carbide devices and manufacturing methods therefor

Methods of fabricating silicon carbide power devices by controlled annealing

Methods of fabricating silicon carbide metal-semiconductor field effect transistors

High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities

High voltage silicon carbide devices having bi-directional blocking capabilities

Large area silicon carbide devices

Manufacturing methods for large area silicon carbide devices

Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen

High voltage silicon carbide devices having bi-directional blocking capabilities

UNIV NORTH CAROLINA STATE

Dry etching of silicon carbide

Dry etching of silicon carbide

Bipolar junction transistor on silicon carbide

Metal-insulator-semiconductor capacitor formed on silicon carbide

Platinum ohmic contact to p-type silicon carbide

DAS MRINAL K

Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen