Inventor
ARUGA MICHIO
JP15 patents
⚠️ This page may combine multiple inventors who share the name “ARUGA MICHIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
13 patentsUS7036453B2May 2, 2006
Apparatus for reducing plasma charge damage for plasma processes
APPLIED MATERIALS INC467 citations98
US6660662B2Dec 9, 2003
Method of reducing plasma charge damage for plasma processes
APPLIED MATERIALS INC478 citations98
US5500249AMar 19, 1996
Uniform tungsten silicide films produced by chemical vapor deposition
APPLIED MATERIALS INC267 citations97
US5877086AMar 2, 1999
Metal planarization using a CVD wetting film
APPLIED MATERIALS INC52 citations96
US5456757AOct 10, 1995
Susceptor for vapor deposition
APPLIED MATERIALS INC399 citations95
US5643633AJul 1, 1997
Uniform tungsten silicide films produced by chemical vapor depostiton
APPLIED MATERIALS INC75 citations94
US5510297AApr 23, 1996
Process for uniform deposition of tungsten silicide on semiconductor wafers by treatment of susceptor having aluminum nitride surface thereon with tungsten silicide after cleaning of susceptor
APPLIED MATERIALS INC22 citations92
US5482749AJan 9, 1996
Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein
APPLIED MATERIALS INC28 citations92
US5997950ADec 7, 1999
Substrate having uniform tungsten silicide film and method of manufacture
APPLIED MATERIALS INC29 citations91
US5558910ASep 24, 1996
Uniform tungsten silicide films produced by chemical vapor deposition
APPLIED MATERIALS INC24 citations91
US6090706AJul 18, 2000
Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein
APPLIED MATERIALS INC21 citations88
US5779848AJul 14, 1998
Corrosion-resistant aluminum nitride coating for a semiconductor chamber window
APPLIED MATERIALS INC12 citations73
US6632726B2Oct 14, 2003
Film formation method and film formation apparatus
APPLIED MATERIALS INC4 citations63