P

Inventor

KITTL JORGE ADRIAN

US12 patents
⚠️ This page may combine multiple inventors who share the name “KITTL JORGE ADRIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEXAS INSTRUMENTS INC

5 patents
US6046105AApr 4, 2000

Preferential lateral silicidation of gate with low source and drain silicon consumption

TEXAS INSTRUMENTS INC21 citations92
US6004871ADec 21, 1999

Implant enhancement of titanium silicidation

TEXAS INSTRUMENTS INC38 citations92
US6242333B1Jun 5, 2001

Method to enhance the formation of nucleation sites on silicon structures and an improved silicon structure

TEXAS INSTRUMENTS INC10 citations68
US6777300B2Aug 17, 2004

Method to improve silicide formation on polysilicon

TEXAS INSTRUMENTS INC4 citations62
US6429455B1Aug 6, 2002

Method to enhance the formation of nucleation sites on silicon structures and an improved silicon structure

TEXAS INSTRUMENTS INC3 citations57

IMEC

4 patents
US7759748B2Jul 20, 2010

Semiconductor device with reduced diffusion of workfunction modulating element

IMEC7 citations71
US8344460B2Jan 1, 2013

Method for forming a nickelsilicide FUSI gate

IMEC2 citations61
US7851297B2Dec 14, 2010

Dual workfunction semiconductor device

IMEC2 citations58
US7989344B2Aug 2, 2011

Method for forming a nickelsilicide FUSI gate

IMEC0 citations51

IMEC INTER UNI MICRO ELECTR

2 patents
US7504329B2Mar 17, 2009

Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET

IMEC INTER UNI MICRO ELECTR11 citations78
US7491635B2Feb 17, 2009

Method for forming a fully silicided gate and devices obtained thereof

IMEC INTER UNI MICRO ELECTR2 citations57

VISOKAY MARK

1 patent
US8183137B2May 22, 2012

Use of dopants to provide low defect gate full silicidation

VISOKAY MARK0 citations44