Inventor

HAO MING YIN

US25 patents

⚠️ This page may combine multiple inventors who share the name “HAO MING YIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HAO MING YIN

ADVANCED MICRO DEVICES INC

Laser tailoring retrograde channel profile in surfaces

Multiple channel implantation to form retrograde channel profile and to engineer threshold voltage and sub-surface punch-through

Forming retrograde channel profile and shallow LLDD/S-D extensions using nitrogen implants

Ultrathin oxynitride structure and process for VLSI applications

Process for reliable ultrathin oxynitride formation

Minimization of line width variation in photolithography

Oxygen implantation for reduction of junction capacitance in MOS transistors

Method for making transistor having reduced series resistance

Dual spacer method of forming CMOS transistors with substantially the same sub 0.25 micron gate length

MOS transistor processing utilizing UV-nitride removable spacer and HF etch

Removable spacer technology using ion implantation for forming asymmetric MOS transistors

MOS-type transistor processing utilizing UV-nitride removable spacer and HF etch

Method for fabricating semiconductor device

Method to optimize p-channel CMOS ICs using Qbd as a monitor of boron penetration

Retrograde well structure formation by nitrogen implantation

Semiconductor device with asymmetric channel dopant profile

Indium retrograde channel doping for improved gate oxide reliability

Preventing boron penetration through thin gate oxide of P-channel devices by doping polygate with silicon

Preventing boron penetration through thin gate oxide of P-channel devices in advanced CMOS technology

Hot-carrier reliability in submicron MOS devices by oxynitridation

Method and circuit for detecting boron (&#34;B&#34;) in a semiconductor device using threshold voltage (&#34;V&#34;) fluence test

Method of improving MOS device performance by controlling degree of depletion in the gate electrode

UNITED MICROELECTRONICS CORP

Capacitor in an interconnect system and method of manufacturing thereof

Method of fabricating a MOS transistor having SEG silicon

Method of forming a MOS transistor

Method and circuit for detecting boron ("B") in a semiconductor device using threshold voltage ("V") fluence test