Inventor

HUANG LIN-YU

TW164 patents

Patents

50 patents

US11532713B2Dec 20, 2022

Gate spacer with air gap for semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations86

US11257758B2Feb 22, 2022

Backside connection structures for nanostructures and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84

US12369365B2Jul 22, 2025

Semiconductor devices with backside power rail and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations75

US11830769B2Nov 28, 2023

Semiconductor device with air gaps and method of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75

US11682730B2Jun 20, 2023

Connector via structures for nanostructures and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75

US12132092B2Oct 29, 2024

Backside vias in semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US12040273B2Jul 16, 2024

Semiconductor device with multi-layer dielectric

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US12009394B2Jun 11, 2024

Source/drain contacts and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11984350B2May 14, 2024

Integrated circuit structure with backside interconnection structure having air gap

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11915972B2Feb 27, 2024

Methods of forming spacers for semiconductor devices including backside power rails

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11721623B2Aug 8, 2023

Backside connection structures for nanostructures and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11670691B2Jun 6, 2023

Method for forming source/drain contacts utilizing an inhibitor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11658226B2May 23, 2023

Backside gate contact

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

US11640941B2May 2, 2023

Semiconductor devices including metal gate protection and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11588050B2Feb 21, 2023

Backside contact

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11563001B2Jan 24, 2023

Air spacer and capping structures in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73

US11551969B2Jan 10, 2023

Integrated circuit structure with backside interconnection structure having air gap

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US11532714B2Dec 20, 2022

Semiconductor device and method of forming thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11508615B2Nov 22, 2022

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11502201B2Nov 15, 2022

Semiconductor device with backside power rail and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73

US11482594B2Oct 25, 2022

Semiconductor devices with backside power rail and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

US11456246B2Sep 27, 2022

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11456209B2Sep 27, 2022

Spacers for semiconductor devices including a backside power rails

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73

US11424332B2Aug 23, 2022

Gap spacer for backside contact structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11404570B2Aug 2, 2022

Semiconductor devices with embedded ferroelectric field effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US11387140B2Jul 12, 2022

Enlarging contact area and process window for a contact via

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US11361986B2Jun 14, 2022

Using a liner layer to enlarge process window for a contact via

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11342413B2May 24, 2022

Selective liner on backside via and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73

US11316023B2Apr 26, 2022

Dumbbell shaped self-aligned capping layer over source/drain contacts and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US11309212B2Apr 19, 2022

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11257926B2Feb 22, 2022

Self-aligned contact structures

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

US11251305B2Feb 15, 2022

Fin field effect transistor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11152475B2Oct 19, 2021

Method for forming source/drain contacts utilizing an inhibitor

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73

US10943829B2Mar 9, 2021

Slot contacts and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US10867863B1Dec 15, 2020

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US10755964B1Aug 25, 2020

Source/drain isolation structure and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

US12525485B2Jan 13, 2026

Gate contact structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64

US12414362B2Sep 9, 2025

Fins disposed on stacks of nanostructures where the nanostructures are wrapped around by a gate

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64

US12568670B2Mar 3, 2026

Self-aligned contact structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12557643B2Feb 17, 2026

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12532505B2Jan 20, 2026

Semiconductor structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12525486B2Jan 13, 2026

Isolation structure for metal interconnect

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12500142B2Dec 16, 2025

Semiconductor devices including through vias and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12463092B2Nov 4, 2025

Semiconductor device with air gaps and method of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US12463096B2Nov 4, 2025

Semiconductor devices including low-k metal gate isolation and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

Showing the top 50 of 164 patents by PatentIndex Score.

HUANG LIN-YU

Patents

Source/drain contacts and methods of forming same

Capacitance reduction for backside power rail device

Semiconductor device structure and methods of forming the same

Backside vias in semiconductor device

Semiconductor device having backside via and method of fabricating thereof

Gate spacer with air gap for semiconductor device structure and method for forming the same

Backside connection structures for nanostructures and methods of forming the same

Semiconductor devices with backside power rail and method thereof

Semiconductor device with air gaps and method of fabrication thereof

Connector via structures for nanostructures and methods of forming the same

Backside vias in semiconductor device

Semiconductor device with multi-layer dielectric

Source/drain contacts and methods of forming same

Integrated circuit structure with backside interconnection structure having air gap

Methods of forming spacers for semiconductor devices including backside power rails

Backside connection structures for nanostructures and methods of forming the same

Method for forming source/drain contacts utilizing an inhibitor

Backside gate contact

Semiconductor devices including metal gate protection and methods of fabrication thereof

Backside contact

Air spacer and capping structures in semiconductor devices

Integrated circuit structure with backside interconnection structure having air gap

Semiconductor device and method of forming thereof

Semiconductor device structure and methods of forming the same

Semiconductor device with backside power rail and methods of fabrication thereof

Semiconductor devices with backside power rail and method thereof

Semiconductor device structure and methods of forming the same

Spacers for semiconductor devices including a backside power rails

Gap spacer for backside contact structure

Semiconductor devices with embedded ferroelectric field effect transistors

Enlarging contact area and process window for a contact via

Using a liner layer to enlarge process window for a contact via

Selective liner on backside via and method thereof

Dumbbell shaped self-aligned capping layer over source/drain contacts and method thereof

Semiconductor device structure and methods of forming the same

Self-aligned contact structures

Fin field effect transistor device structure and method for forming the same

Method for forming source/drain contacts utilizing an inhibitor

Slot contacts and method forming same

Semiconductor device structure and method for forming the same

Source/drain isolation structure and methods thereof

Gate contact structure

Fins disposed on stacks of nanostructures where the nanostructures are wrapped around by a gate

Self-aligned contact structures

Semiconductor device structure and methods of forming the same

Semiconductor structure and method for forming the same

Isolation structure for metal interconnect

Semiconductor devices including through vias and methods of forming the same

Semiconductor device with air gaps and method of fabrication thereof

Semiconductor devices including low-k metal gate isolation and methods of fabrication thereof