Inventor
Yu li-zhen
TW138 patents
Patents
50 patentsUS11222892B2Jan 11, 2022
Backside power rail and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations94
US11581224B2Feb 14, 2023
Method for forming long channel back-side power rail device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11532713B2Dec 20, 2022
Source/drain contacts and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11450751B2Sep 20, 2022
Integrated circuit structure with backside via rail
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11404548B2Aug 2, 2022
Capacitance reduction for backside power rail device
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11374093B2Jun 28, 2022
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11349004B2May 31, 2022
Backside vias in semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11239325B2Feb 1, 2022
Semiconductor device having backside via and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11257758B2Feb 22, 2022
Backside connection structures for nanostructures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US12369365B2Jul 22, 2025
Semiconductor devices with backside power rail and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations75
US11830769B2Nov 28, 2023
Semiconductor device with air gaps and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11682730B2Jun 20, 2023
Connector via structures for nanostructures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11621197B2Apr 4, 2023
Semiconductor device with gate cut feature and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations75
US12132092B2Oct 29, 2024
Backside vias in semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12009394B2Jun 11, 2024
Source/drain contacts and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11984350B2May 14, 2024
Integrated circuit structure with backside interconnection structure having air gap
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11955515B2Apr 9, 2024
Dual side contact structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11915972B2Feb 27, 2024
Methods of forming spacers for semiconductor devices including backside power rails
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11848372B2Dec 19, 2023
Method and structure for reducing source/drain contact resistance at wafer backside
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11804486B2Oct 31, 2023
Backside power rail and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11777003B2Oct 3, 2023
Semiconductor structure with wraparound backside amorphous layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11721623B2Aug 8, 2023
Backside connection structures for nanostructures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11670691B2Jun 6, 2023
Method for forming source/drain contacts utilizing an inhibitor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11658226B2May 23, 2023
Backside gate contact
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11621224B2Apr 4, 2023
Contact features and methods of fabricating the same in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11588050B2Feb 21, 2023
Backside contact
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11551969B2Jan 10, 2023
Integrated circuit structure with backside interconnection structure having air gap
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11532714B2Dec 20, 2022
Semiconductor device and method of forming thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11508615B2Nov 22, 2022
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11502201B2Nov 15, 2022
Semiconductor device with backside power rail and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11482595B1Oct 25, 2022
Dual side contact structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11482594B2Oct 25, 2022
Semiconductor devices with backside power rail and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11456246B2Sep 27, 2022
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11456209B2Sep 27, 2022
Spacers for semiconductor devices including a backside power rails
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11424332B2Aug 23, 2022
Gap spacer for backside contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11387140B2Jul 12, 2022
Enlarging contact area and process window for a contact via
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11361986B2Jun 14, 2022
Using a liner layer to enlarge process window for a contact via
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11342413B2May 24, 2022
Selective liner on backside via and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11316023B2Apr 26, 2022
Dumbbell shaped self-aligned capping layer over source/drain contacts and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11309212B2Apr 19, 2022
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11257926B2Feb 22, 2022
Self-aligned contact structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11251305B2Feb 15, 2022
Fin field effect transistor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11152475B2Oct 19, 2021
Method for forming source/drain contacts utilizing an inhibitor
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11094788B2Aug 17, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10943829B2Mar 9, 2021
Slot contacts and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12414362B2Sep 9, 2025
Fins disposed on stacks of nanostructures where the nanostructures are wrapped around by a gate
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12568670B2Mar 3, 2026
Self-aligned contact structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12557643B2Feb 17, 2026
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12532505B2Jan 20, 2026
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12532509B2Jan 20, 2026
Integrated circuit with backside trench for nanosheet removal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
Showing the top 50 of 138 patents by PatentIndex Score.