Inventor

CHUANG CHENG-CHI

TW228 patents

⚠️ This page may combine multiple inventors who share the name “CHUANG CHENG-CHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHUANG CHENG-CHI

TAIWAN SEMICONDUCTOR MFG CO LTD

Backside power rail and methods of forming the same

Semiconductor devices with backside power distribution network and frontside through silicon via

Air-gap forming techniques for interconnect structures

Method for forming long channel back-side power rail device

Source/drain contacts and methods of forming same

Integrated circuit structure with backside via rail

Semiconductor devices with backside air gap dielectric

Capacitance reduction for backside power rail device

Semiconductor device structure and methods of forming the same

Semiconductor devices with backside power rail and backside self-aligned via

Backside vias in semiconductor device

Self-aligned etch in semiconductor devices

Semiconductor device having backside via and method of fabricating thereof

Method for manufacturing an anchor-shaped backside via

Low resistance pickup cells for SRAM

Gate spacer with air gap for semiconductor device structure and method for forming the same

Backside connection structures for nanostructures and methods of forming the same

Structure and formation method of interconnection structure of semiconductor device

Hybrid copper structure for advance interconnect usage

Interconnect structure with air-gaps

Method of semiconductor integrated circuit fabrication

Hybrid copper structure for advance interconnect usage

Combination interconnect structure and methods of forming same

Semiconductor devices with backside power rail and method thereof

Semiconductor devices with backside routing and method of forming same

Semiconductor device with air gaps and method of fabrication thereof

Connector via structures for nanostructures and methods of forming the same

Semiconductor device with gate cut feature and method for forming the same

Increasing device density and reducing cross-talk spacer structures

Backside vias in semiconductor device

Self-aligned etch in semiconductor devices

Semiconductor devices with backside power rail and backside self-aligned via

Source/drain contacts and methods of forming same

Integrated circuit structure with backside interconnection structure having air gap

Dual side contact structures in semiconductor devices

Methods of forming spacers for semiconductor devices including backside power rails

Method and structure for reducing source/drain contact resistance at wafer backside

Interconnect structure with air-gaps

Semiconductor devices with backside power distribution network and frontside through silicon via

Self-aligned etch in semiconductor devices

Backside power rail and methods of forming the same

Semiconductor structure with wraparound backside amorphous layer

Backside connection structures for nanostructures and methods of forming the same

Method for forming source/drain contacts utilizing an inhibitor

Semiconductor devices with backside air gap dielectric

Backside gate contact

Drain side recess for back-side power rail device

Semiconductor devices including metal gate protection and methods of fabrication thereof

Semiconductor structure having an anchor-shaped backside via

CHUANG CHENG-CHI

Passivation scheme