Inventor

KIM YEONG-KWAN

KR18 patents

⚠️ This page may combine multiple inventors who share the name “KIM YEONG-KWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KIM YEONG-KWAN

SAMSUNG ELECTRONICS CO LTD

Methods of forming thin films by atomic layer deposition

Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane

Method for manufacturing thin film using atomic layer deposition

Method for forming dielectric film of capacitor having different thicknesses partly

Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature

Method of forming a thin film using atomic layer deposition

Method of forming thin film using atomic layer deposition method

Semiconductor memory device having capacitor protection layer and method for manufacturing the same

Capacitor for a semiconductor device and method for forming the same

Method for forming a capacitor of a semiconductor device

Method for manufacturing thin films of multi-element group oxide or nitride

Multi-layer film for a thin film structure and a capacitor using the same

Semiconductor device having thin film formed by atomic layer deposition and method for fabricating the same

Integrated circuit devices that utilize doped Poly-Si1−xGex conductive plugs as interconnects

Multi-layer film for thin film structure, capacitor using the same and fabrication method thereof

Semiconductor device having thin film formed by atomic layer deposition and method for fabricating the same

Methods of fabricating integrated circuit devices that utilize doped poly-Si1−xGex conductive plugs as interconnects

APPLIED MATERIALS INC

Method for hafnium nitride deposition