P

Inventor

DEBOER SCOTT JEFFREY

US45 patents
⚠️ This page may combine multiple inventors who share the name “DEBOER SCOTT JEFFREY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

44 patents
US6251802B1Jun 26, 2001

Methods of forming carbon-containing layers

MICRON TECHNOLOGY INC262 citations99
US5910880AJun 8, 1999

Semiconductor circuit components and capacitors

MICRON TECHNOLOGY INC98 citations99
US6858523B2Feb 22, 2005

Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride

MICRON TECHNOLOGY INC51 citations96
US6458645B2Oct 1, 2002

Capacitor having tantalum oxynitride film and method for making same

MICRON TECHNOLOGY INC41 citations96
US6191443B1Feb 20, 2001

Capacitors, methods of forming capacitors, and DRAM memory cells

MICRON TECHNOLOGY INC52 citations96
US6162744ADec 19, 2000

Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers

MICRON TECHNOLOGY INC62 citations96
US6146959ANov 14, 2000

Method of forming capacitors containing tantalum

MICRON TECHNOLOGY INC64 citations96
US6864527B2Mar 8, 2005

Capacitor having tantalum oxynitride film and method for making same

MICRON TECHNOLOGY INC18 citations93
US6794703B1Sep 21, 2004

High pressure reoxidation/anneal of high dielectric constant

MICRON TECHNOLOGY INC13 citations93
US6635530B2Oct 21, 2003

Methods of forming gated semiconductor assemblies

MICRON TECHNOLOGY INC16 citations93
US6593616B2Jul 15, 2003

Buried bit line memory circuitry

MICRON TECHNOLOGY INC14 citations93
US6486020B1Nov 26, 2002

High pressure reoxidation/anneal of high dielectric constant materials

MICRON TECHNOLOGY INC26 citations93
US6440860B1Aug 27, 2002

Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride

MICRON TECHNOLOGY INC21 citations93
US6337274B1Jan 8, 2002

Methods of forming buried bit line memory circuitry

MICRON TECHNOLOGY INC21 citations93
US6282080B1Aug 28, 2001

Semiconductor circuit components and capacitors

MICRON TECHNOLOGY INC25 citations93
US6082375AJul 4, 2000

Method of processing internal surfaces of a chemical vapor deposition reactor

MICRON TECHNOLOGY INC17 citations93
US6400552B2Jun 4, 2002

Capacitor with conductively doped Si-Ge alloy electrode

MICRON TECHNOLOGY INC13 citations82
US7206215B2Apr 17, 2007

Antifuse having tantalum oxynitride film and method for making same

MICRON TECHNOLOGY INC9 citations74
US7045277B2May 16, 2006

Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride

MICRON TECHNOLOGY INC7 citations74
US7038265B2May 2, 2006

Capacitor having tantalum oxynitride film and method for making same

MICRON TECHNOLOGY INC4 citations74
US7009264B1Mar 7, 2006

Selective spacer to prevent metal oxide formation during polycide reoxidation

MICRON TECHNOLOGY INC8 citations74
US6773981B1Aug 10, 2004

Methods of forming capacitors

MICRON TECHNOLOGY INC10 citations74
US6756634B2Jun 29, 2004

Gated semiconductor assemblies

MICRON TECHNOLOGY INC12 citations74
US6693345B2Feb 17, 2004

Semiconductor wafer assemblies comprising photoresist over silicon nitride materials

MICRON TECHNOLOGY INC6 citations74
US6627508B1Sep 30, 2003

Method of forming capacitors containing tantalum

MICRON TECHNOLOGY INC7 citations74
US6610211B1Aug 26, 2003

Method of processing internal surfaces of a chemical vapor deposition reactor

MICRON TECHNOLOGY INC7 citations74
US6417559B1Jul 9, 2002

Semiconductor wafer assemblies comprising photoresist over silicon nitride materials

MICRON TECHNOLOGY INC10 citations74
US6391710B1May 21, 2002

Methods of forming capacitors

MICRON TECHNOLOGY INC13 citations74
US6368962B2Apr 9, 2002

Semiconductor processing method of forming a conductive line, and buried bit line memory circuitry

MICRON TECHNOLOGY INC8 citations74
US6323139B1Nov 27, 2001

Semiconductor processing methods of forming photoresist over silicon nitride materials

MICRON TECHNOLOGY INC5 citations74
US7078328B2Jul 18, 2006

Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride

MICRON TECHNOLOGY INC1 citations63
US7067411B2Jun 27, 2006

Method to prevent metal oxide formation during polycide reoxidation

MICRON TECHNOLOGY INC4 citations63
US7057263B2Jun 6, 2006

Semiconductor wafer assemblies comprising photoresist over silicon nitride materials

MICRON TECHNOLOGY INC2 citations63
US6326321B1Dec 4, 2001

Methods of forming a layer of silicon nitride in semiconductor fabrication processes

MICRON TECHNOLOGY INC3 citations63
US6316372B1Nov 13, 2001

Methods of forming a layer of silicon nitride in a semiconductor fabrication process

MICRON TECHNOLOGY INC3 citations63
US6194321B1Feb 27, 2001

Semiconductor processing methods utilizing boron and nitrogen, and semiconductor wafers comprising boron and nitrogen

MICRON TECHNOLOGY INC6 citations63
US6528436B1Mar 4, 2003

Method of forming silicon nitride layer directly on HSG polysilicon

MICRON TECHNOLOGY INC2 citations62
US7638436B2Dec 29, 2009

Semiconductor processing methods of transferring patterns from patterned photoresists to materials

MICRON TECHNOLOGY INC0 citations52
US7435688B2Oct 14, 2008

Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride

MICRON TECHNOLOGY INC0 citations52
US7208805B2Apr 24, 2007

Structures comprising a layer free of nitrogen between silicon nitride and photoresist

MICRON TECHNOLOGY INC0 citations52
US7141850B2Nov 28, 2006

Gated semiconductor assemblies and methods of forming gated semiconductor assemblies

MICRON TECHNOLOGY INC0 citations52
US7115926B1Oct 3, 2006

Capacitor constructions, DRAM constructions, and semiconductive material assemblies

MICRON TECHNOLOGY INC0 citations52
US6677661B1Jan 13, 2004

Semiconductive wafer assemblies

MICRON TECHNOLOGY INC0 citations52
US6670288B1Dec 30, 2003

Methods of forming a layer of silicon nitride in a semiconductor fabrication process

MICRON TECHNOLOGY INC0 citations52

(unassigned)

1 patent