Inventor
KIM JONG-JIB
KR5 patents
Patents
5 patentsUS6909143B2Jun 21, 2005
Lateral double-diffused MOS transistor having multiple current paths for high breakdown voltage and low on-resistance
FAIRCHILD KR SEMICONDUCTOR LTD73 citations96
US6600206B2Jul 29, 2003
High voltage semiconductor device having high breakdown voltage isolation region
FAIRCHILD KR SEMICONDUCTOR LTD15 citations80
US6486512B2Nov 26, 2002
Power semiconductor device having high breakdown voltage and method for fabricating the same
FAIRCHILD KR SEMICONDUCTOR LTD10 citations67
US6995453B2Feb 7, 2006
High voltage integrated circuit including bipolar transistor within high voltage island area
FAIRCHILD KR SEMICONDUCTOR LTD6 citations61
US7888768B2Feb 15, 2011
Power integrated circuit device having embedded high-side power switch
FAIRCHILD KR SEMICONDUCTOR LTD0 citations40