Inventor
CHANG WOOJIN
KR20 patents
⚠️ This page may combine multiple inventors who share the name “CHANG WOOJIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KOREA ELECTRONICS TELECOMM
7 patentsUS8901608B2Dec 2, 2014
Transistor and method of fabricating the same
KOREA ELECTRONICS TELECOMM4 citations73
US9136347B2Sep 15, 2015
Nitride semiconductor device
KOREA ELECTRONICS TELECOMM5 citations72
US9337121B2May 10, 2016
Semiconductor device and method of fabricating the same
KOREA ELECTRONICS TELECOMM4 citations71
US8053345B2Nov 8, 2011
Method for fabricating field effect transistor using a compound semiconductor
KOREA ELECTRONICS TELECOMM3 citations62
US8633057B2Jan 21, 2014
Semiconductor package and method of fabricating the same
KOREA ELECTRONICS TELECOMM2 citations61
US8697491B2Apr 15, 2014
Semiconductor package and method of fabricating the same
KOREA ELECTRONICS TELECOMM0 citations51
US9159583B2Oct 13, 2015
Methods of manufacturing nitride semiconductor devices
KOREA ELECTRONICS TELECOMM1 citations50
ELECTRONICS & TELECOMMUNICATIONS RES INST
7 patentsUS9825622B2Nov 21, 2017
Cascode switch circuit
ELECTRONICS & TELECOMMUNICATIONS RES INST5 citations72
US10020201B2Jul 10, 2018
Semiconductor device and method of fabricating the same
ELECTRONICS & TELECOMMUNICATIONS RES INST2 citations71
US10256811B2Apr 9, 2019
Cascode switch circuit including level shifter
ELECTRONICS & TELECOMMUNICATIONS RES INST2 citations70
US11817826B2Nov 14, 2023
Frequency mixer including non-linear circuit
ELECTRONICS & TELECOMMUNICATIONS RES INST0 citations60
US11223333B2Jan 11, 2022
Microwave amplification circuit
ELECTRONICS & TELECOMMUNICATIONS RES INST0 citations52
US10014401B2Jul 3, 2018
Semiconductor device with passivation layer for control of leakage current
ELECTRONICS & TELECOMMUNICATIONS RES INST0 citations40
US9666569B2May 30, 2017
Switch circuit of cascode type having high speed switching performance
ELECTRONICS & TELECOMMUNICATIONS RES INST0 citations40