P

Inventor

PARK JONG YUL

KR8 patents
⚠️ This page may combine multiple inventors who share the name “PARK JONG YUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

4 patents
US6463002B2Oct 8, 2002

Refresh-type memory with zero write recovery time and no maximum cycle time

SAMSUNG ELECTRONICS CO LTD24 citations91
US6275437B1Aug 14, 2001

Refresh-type memory with zero write recovery time and no maximum cycle time

SAMSUNG ELECTRONICS CO LTD45 citations91
US6510094B2Jan 21, 2003

Method and apparatus for refreshing semiconductor memory

SAMSUNG ELECTRONICS CO LTD12 citations72
US6473353B2Oct 29, 2002

Refresh method capable of reducing memory cell access time in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations61

UNIST (ULSAN NAT INSTITUTE OF SCIENCE AND TECHNOLOGY)

1 patent
US9869711B2Jan 16, 2018

Method for evaluating performance of plasma wave transistor

UNIST (ULSAN NAT INSTITUTE OF SCIENCE AND TECHNOLOGY)2 citations69

ELECTRONICS & TELECOMMUNICATIONS RES INST

1 patent
US11817826B2Nov 14, 2023

Frequency mixer including non-linear circuit

ELECTRONICS & TELECOMMUNICATIONS RES INST0 citations60

ULSAN NAT INST SCIENCE & TECH UNIST

1 patent
US10684320B2Jun 16, 2020

Performance evaluation method of suspended channel plasma wave transistor

ULSAN NAT INST SCIENCE & TECH UNIST0 citations46

UNIST (ULSAN NAT INST OF SCIENCE AND TECHNOLOGY)

1 patent
US9780198B2Oct 3, 2017

Method for manufacturing high-performance and low-power field effect transistor of which surface roughness scattering is minimized or removed

UNIST (ULSAN NAT INST OF SCIENCE AND TECHNOLOGY)0 citations44