Inventor
NAKAZATO KAZUO
GB42 patents
⚠️ This page may combine multiple inventors who share the name “NAKAZATO KAZUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
32 patentsUS5952692ASep 14, 1999
Memory device with improved charge storage barrier structure
HITACHI LTD255 citations99
US6753568B1Jun 22, 2004
Memory device
HITACHI LTD64 citations96
US6211531B1Apr 3, 2001
Controllable conduction device
HITACHI LTD63 citations96
US6060723AMay 9, 2000
Controllable conduction device
HITACHI LTD69 citations96
US7023721B2Apr 4, 2006
Semiconductor integrated circuit device
HITACHI LTD30 citations93
US6876569B2Apr 5, 2005
Semiconductor integrated circuit device with improved storage MOSFET arrangement
HITACHI LTD30 citations93
US6762951B2Jul 13, 2004
Semiconductor integrated circuit device
HITACHI LTD19 citations93
US6515892B1Feb 4, 2003
Semiconductor integrated circuit device
HITACHI LTD37 citations93
US4769687ASep 6, 1988
Lateral bipolar transistor and method of producing the same
HITACHI LTD25 citations93
US6169308B1Jan 2, 2001
Semiconductor memory device and manufacturing method thereof
HITACHI LTD24 citations92
US6501116B2Dec 31, 2002
Semiconductor memory device with MIS transistors
HITACHI LTD42 citations91
US5677637AOct 14, 1997
Logic device using single electron coulomb blockade techniques
HITACHI LTD32 citations90
US6465834B1Oct 15, 2002
Semiconductor device
HITACHI LTD18 citations82
US5227660AJul 13, 1993
Semiconductor device
HITACHI LTD18 citations82
US5391912AFeb 21, 1995
Semiconductor device having polycrystalline silicon region forming a lead-out electrode region and extended beneath active region of transistor
HITACHI LTD15 citations74
US5177584AJan 5, 1993
Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same
HITACHI LTD8 citations74
US5061645AOct 29, 1991
Method of manufacturing a bipolar transistor
HITACHI LTD9 citations74
US4887145ADec 12, 1989
Semiconductor device in which electrodes are formed in a self-aligned manner
HITACHI LTD18 citations74
US4812894AMar 14, 1989
Semiconductor device
HITACHI LTD17 citations74
US7132713B2Nov 7, 2006
Controllable conduction device with electrostatic barrier
HITACHI LTD7 citations73
US6861692B2Mar 1, 2005
Method of manufacturing semiconductor device and semiconductor device
HITACHI LTD9 citations73
US5237200AAug 17, 1993
Semiconductor bipolar transistor with concentric regions
HITACHI LTD13 citations73
US5109263AApr 28, 1992
Semiconductor device with optimal distance between emitter and trench isolation
HITACHI LTD11 citations73
US4956688ASep 11, 1990
Radiation resistant bipolar memory
HITACHI LTD13 citations73
US4858184AAug 15, 1989
Radiation resistant bipolar memory
HITACHI LTD7 citations73
US4829361AMay 9, 1989
Semiconductor device
HITACHI LTD9 citations73
US4819055AApr 4, 1989
Semiconductor device having a PN junction formed on an insulator film
HITACHI LTD8 citations73
US4860086AAug 22, 1989
Semiconductor device
HITACHI LTD9 citations72
US6825527B2Nov 30, 2004
Semiconductor memory device and manufacturing method
HITACHI LTD4 citations63
US4958320ASep 18, 1990
Radiation resistant bipolar memory
HITACHI LTD5 citations62
US6642574B2Nov 4, 2003
Semiconductor memory device and manufacturing method thereof
HITACHI LTD1 citations52
US4825281AApr 25, 1989
Bipolar transistor with sidewall bare contact structure
HITACHI LTD1 citations52
FUJI HEAVY IND LTD
3 patentsUS4558680ADec 17, 1985
System for controlling the air-fuel ratio supplied to a supercharged engine
FUJI HEAVY IND LTD7 citations74
US4541384ASep 17, 1985
System for controlling the air-fuel ratio supplied to an engine
FUJI HEAVY IND LTD3 citations63
US4476834AOct 16, 1984
Air-fuel ratio control system
FUJI HEAVY IND LTD3 citations63