Inventor
AWANO YUJI
JP32 patents
⚠️ This page may combine multiple inventors who share the name “AWANO YUJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
28 patentsUS7084507B2Aug 1, 2006
Integrated circuit device and method of producing the same
FUJITSU LTD93 citations98
US6800886B2Oct 5, 2004
Semiconductor device and method for fabricating the same
FUJITSU LTD67 citations96
US4994866AFeb 19, 1991
Complementary semiconductor device
FUJITSU LTD117 citations96
US4914489AApr 3, 1990
Constant current semiconductor device
FUJITSU LTD98 citations96
US7755115B2Jul 13, 2010
Field effect transistor using carbon nanotube of two or more walls having the outer walls at the gate and source/drain regions removed
FUJITSU LTD22 citations92
US7332810B2Feb 19, 2008
Integrated circuit device and method of producing the same
FUJITSU LTD15 citations92
US7311889B2Dec 25, 2007
Carbon nanotubes, process for their production, and catalyst for production of carbon nanotubes
FUJITSU LTD47 citations92
US6509586B2Jan 21, 2003
Semiconductor device, method for fabricating the semiconductor device and semiconductor integrated circuit
FUJITSU LTD28 citations92
US7633148B2Dec 15, 2009
Semiconductor device with semiconductor chips mounted on mounting board via conductive anaotubes
FUJITSU LTD13 citations84
US7417320B2Aug 26, 2008
Substrate structure and manufacturing method of the same
FUJITSU LTD9 citations83
US5024958AJun 18, 1991
Compound semiconductor device and a manufacturing method thereof
FUJITSU LTD18 citations82
US7923283B2Apr 12, 2011
Integrated circuit device and method of producing the same
FUJITSU LTD5 citations74
US6885041B2Apr 26, 2005
Semiconductor device, method for fabricating the semiconductor device and semiconductor integrated circuit
FUJITSU LTD11 citations74
US5543749AAug 6, 1996
Resonant tunneling transistor
FUJITSU LTD10 citations74
US5212404AMay 18, 1993
Semiconductor device having a vertical channel of carriers
FUJITSU LTD12 citations74
US5027164AJun 25, 1991
Semiconductor device
FUJITSU LTD13 citations74
US4967252AOct 30, 1990
Compound semiconductor bipolar device with side wall contact
FUJITSU LTD15 citations74
US4963948AOct 16, 1990
Semiconductor device having level shift diode
FUJITSU LTD15 citations74
US4916495AApr 10, 1990
Semiconductor device with semi-metal
FUJITSU LTD8 citations74
US9564589B2Feb 7, 2017
Forming method and forming apparatus of carbon nanotubes
FUJITSU LTD3 citations73
US5148245ASep 15, 1992
Semiconductor device having a selectively doped heterostructure
FUJITSU LTD8 citations73
US7830009B2Nov 9, 2010
Semiconductor package and method of manufacturing the same
FUJITSU LTD4 citations63
US7696512B2Apr 13, 2010
Electron device and process of manufacturing thereof
FUJITSU LTD2 citations63
US5455441AOct 3, 1995
Semiconductor device having a structure for accelerating carriers
FUJITSU LTD4 citations63
US5296390AMar 22, 1994
Method for fabricating a semiconductor device having a vertical channel of carriers
FUJITSU LTD5 citations63
US5698868ADec 16, 1997
High-speed heterojunction transistor
FUJITSU LTD3 citations61
US9017636B2Apr 28, 2015
Manufacturing method of semiconductor device
FUJITSU LTD1 citations52
US7786487B2Aug 31, 2010
Semiconductor device and manufacturing method thereof
FUJITSU LTD0 citations51
AWANO YUJI
3 patentsUS8535635B2Sep 17, 2013
Method of manufacturing carbon cylindrical structures and biopolymer detection device
AWANO YUJI2 citations61
US8293577B2Oct 23, 2012
Semiconductor package and method of manufacturing the same
AWANO YUJI2 citations61
US8277770B2Oct 2, 2012
Method of manufacturing carbon nanotube
AWANO YUJI3 citations60