Inventor
NALLAMOTHU SUCHETA
US12 patents
⚠️ This page may combine multiple inventors who share the name “NALLAMOTHU SUCHETA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK 3D LLC
9 patentsUS7915164B2Mar 29, 2011
Method for forming doped polysilicon via connecting polysilicon layers
SANDISK 3D LLC251 citations99
US7566974B2Jul 28, 2009
Doped polysilicon via connecting polysilicon layers
SANDISK 3D LLC190 citations99
US7233522B2Jun 19, 2007
NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same
SANDISK 3D LLC320 citations99
US7221588B2May 22, 2007
Memory array incorporating memory cells arranged in NAND strings
SANDISK 3D LLC259 citations99
US7505321B2Mar 17, 2009
Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same
SANDISK 3D LLC84 citations98
US7433233B2Oct 7, 2008
NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same
SANDISK 3D LLC54 citations96
US7508714B2Mar 24, 2009
Memory array incorporating mirrored NAND strings and non-shared global bit lines within a block
SANDISK 3D LLC30 citations92
US7915163B2Mar 29, 2011
Method for forming doped polysilicon via connecting polysilicon layers
SANDISK 3D LLC4 citations74
US7432141B2Oct 7, 2008
Large-grain p-doped polysilicon films for use in thin film transistors
SANDISK 3D LLC8 citations72
MATRIX SEMICONDUCTOR INC
3 patentsUS7023739B2Apr 4, 2006
NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same
MATRIX SEMICONDUCTOR INC299 citations99
US7005350B2Feb 28, 2006
Method for fabricating programmable memory array structures incorporating series-connected transistor strings
MATRIX SEMICONDUCTOR INC453 citations99
US6960794B2Nov 1, 2005
Formation of thin channels for TFT devices to ensure low variability of threshold voltages
MATRIX SEMICONDUCTOR INC8 citations74