Inventor

GLUSCHENKOV OLEG G

US28 patents

⚠️ This page may combine multiple inventors who share the name “GLUSCHENKOV OLEG G”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLUSCHENKOV OLEG G

IBM

Silicon device on Si:C-OI and SGOI and method of manufacture

Strained finFETs and method of manufacture

High mobility CMOS circuits

Structure and method of making strained semiconductor CMOS transistors having lattice-mismatched semiconductor regions underlying source and drain regions

High-temperature stable gate structure with metallic electrode

Strained Si on multiple materials for bulk or SOI substrates

Method of making strained semiconductor transistors having lattice-mismatched semiconductor regions underlying source and drain regions

NFETs using gate induced stress modulation

Method of forming ultra-thin silicidation-stop extensions in mosfet devices

High-temperature stable gate structure with metallic electrode

Method of making strained semiconductor transistors having lattice-mismatched semiconductor regions underlying source and drain regions

Structure of vertical strained silicon devices

DRAM cell with buried collar and self-aligned buried strap

Ultra shallow junction formation by epitaxial interface limited diffusion

High performance strained CMOS devices

High-temperature stable gate structure with metallic electrode

High performance strained CMOS devices

Strained Si on multiple materials for bulk or SOI substrates

High mobility CMOS circuits

High performance strained CMOS devices

High mobility CMOS circuits

Ultra shallow junction formation by epitaxial interface limited diffusion

Mobility enhanced CMOS devices

Polycrystalline silicon layer with nano-grain structure and method of manufacture

CHIDAMBARRAO DURESETI

Silicon device on Si:C-OI and SGOI and method of manufacture

Silicon device on Si:C SOI and SiGe and method of manufacture

CHEN HUAJIE

Ultra shallow junction formation by epitaxial interface limited diffusion

CHIDAMBARRAO DURESTI

Silicon device on Si: C-oi and Sgoi and method of manufacture