Inventor
LEAM HUN-HYEOUNG
KR24 patents
⚠️ This page may combine multiple inventors who share the name “LEAM HUN-HYEOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
21 patentsUS9595612B2Mar 14, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations84
US9263588B2Feb 16, 2016
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations84
US7833875B2Nov 16, 2010
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US7524747B2Apr 28, 2009
Floating gate memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US7410869B2Aug 12, 2008
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations73
US7041558B2May 9, 2006
Floating gate memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US8008214B2Aug 30, 2011
Method of forming an insulation structure and method of manufacturing a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US8969939B2Mar 3, 2015
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7928495B2Apr 19, 2011
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7521375B2Apr 21, 2009
Method of forming an oxinitride layer
SAMSUNG ELECTRONICS CO LTD2 citations62
US7223657B2May 29, 2007
Methods of fabricating flash memory devices with floating gates that have reduced seams
SAMSUNG ELECTRONICS CO LTD3 citations62
US7902059B2Mar 8, 2011
Methods of forming void-free layers in openings of semiconductor substrates
SAMSUNG ELECTRONICS CO LTD3 citations61
US7736963B2Jun 15, 2010
Method of forming a gate structure for a semiconductor device and method of forming a cell gate structure for a non-volatile memory device
SAMSUNG ELECTRONICS CO LTD5 citations61
US7459364B2Dec 2, 2008
Methods of forming self-aligned floating gates using multi-etching
SAMSUNG ELECTRONICS CO LTD4 citations61
US7189661B2Mar 13, 2007
Method of forming silicon oxynitride layer in semiconductor device and apparatus of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations61
US9847422B2Dec 19, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9184232B2Nov 10, 2015
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7297620B2Nov 20, 2007
Method of forming an oxide layer including increasing the temperature during oxidation
SAMSUNG ELECTRONICS CO LTD0 citations52
US7101803B2Sep 5, 2006
Method of trench isolation and method for manufacturing a non-volatile memory device using the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7629217B2Dec 8, 2009
Methods of forming void-free layers in openings of semiconductor substrates
SAMSUNG ELECTRONICS CO LTD0 citations51
US7160776B2Jan 9, 2007
Methods of forming a gate structure of a non-volatile memory device and apparatus for performing the same
SAMSUNG ELECTRONICS CO LTD0 citations51