P

Inventor

LEE HYEON-DEOK

KR31 patents
⚠️ This page may combine multiple inventors who share the name “LEE HYEON-DEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

30 patents
US7504725B2Mar 17, 2009

Semiconductor memory device having low-resistance tungsten line and method of manufacturing the semiconductor memory device

SAMSUNG ELECTRONICS CO LTD30 citations92
US7125774B2Oct 24, 2006

Method of manufacturing transistor having recessed channel

SAMSUNG ELECTRONICS CO LTD28 citations92
US6010940AJan 4, 2000

Methods for fabricating CVD TiN barrier layers for capacitor structures

SAMSUNG ELECTRONICS CO LTD37 citations92
US5742472AApr 21, 1998

Stacked capacitors for integrated circuit devices and related methods

SAMSUNG ELECTRONICS CO LTD25 citations92
US6964922B2Nov 15, 2005

Methods for forming metal interconnections for semiconductor devices having multiple metal depositions

SAMSUNG ELECTRONICS CO LTD13 citations84
US6607654B2Aug 19, 2003

Copper-plating elecrolyte containing polyvinylpyrrolidone and method for forming a copper interconnect

SAMSUNG ELECTRONICS CO LTD15 citations84
US7563677B2Jul 21, 2009

Recessed gate electrode and method of forming the same and semiconductor device having the recessed gate electrode and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD11 citations82
US7741222B2Jun 22, 2010

Etch stop structure and method of manufacture, and semiconductor device and method of manufacture

SAMSUNG ELECTRONICS CO LTD17 citations81
US6623798B2Sep 23, 2003

Chemical vapor deposition method for depositing silicide and apparatus for performing the same

SAMSUNG ELECTRONICS CO LTD13 citations80
US6747354B2Jun 8, 2004

Semiconductor devices having multilevel interconnections and methods for manufacturing the same

SAMSUNG ELECTRONICS CO LTD8 citations74
US6399457B2Jun 4, 2002

Semiconductor device having capacitor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations74
US7410869B2Aug 12, 2008

Method of manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD7 citations73
US6673718B1Jan 6, 2004

Methods for forming aluminum metal wirings

SAMSUNG ELECTRONICS CO LTD12 citations73
US6905960B2Jun 14, 2005

Method of forming a contact in a semiconductor device

SAMSUNG ELECTRONICS CO LTD9 citations72
US6372616B1Apr 16, 2002

Method of manufacturing an electrical interconnection of a semiconductor device using an erosion protecting plug in a contact hole of interlayer dielectric layer

SAMSUNG ELECTRONICS CO LTD13 citations68
US8053374B2Nov 8, 2011

Method of manufacturing a metal wiring structure

SAMSUNG ELECTRONICS CO LTD3 citations63
US7524724B2Apr 28, 2009

Method of forming titanium nitride layer and method of fabricating capacitor using the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7442607B2Oct 28, 2008

Method of manufacturing transistor having recessed channel

SAMSUNG ELECTRONICS CO LTD4 citations63
US7364967B2Apr 29, 2008

Methods of forming storage capacitors for semiconductor devices

SAMSUNG ELECTRONICS CO LTD6 citations63
US7311109B2Dec 25, 2007

Method for cleaning a processing chamber and method for manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations62
US7119392B2Oct 10, 2006

Storage electrode of a semiconductor device and method of forming the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7135407B2Nov 14, 2006

Method of manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations60
US6774029B2Aug 10, 2004

Method for forming a conductive film and a conductive pattern of a semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations60
US6913979B2Jul 5, 2005

Method of manufacturing a metal oxide semiconductor transistor

SAMSUNG ELECTRONICS CO LTD2 citations59
US7238585B2Jul 3, 2007

Method of forming a storage electrode of a semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations52
US7037828B2May 2, 2006

Semiconductor device having a capping layer including cobalt and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US6261890B1Jul 17, 2001

Semiconductor device having capacitor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7119029B2Oct 10, 2006

Method of oxidizing a silicon substrate and method of forming an oxide layer using the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US7008844B2Mar 7, 2006

Method of forming a gate of a non-volatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations49
US7122468B2Oct 17, 2006

Methods of fabricating integrated circuit conductive contact structures including grooves

SAMSUNG ELECTRONICS CO LTD0 citations39

CHOI KYUNG-IN

1 patent