Inventor
LEE HYEON-DEOK
KR31 patents
⚠️ This page may combine multiple inventors who share the name “LEE HYEON-DEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
30 patentsUS7504725B2Mar 17, 2009
Semiconductor memory device having low-resistance tungsten line and method of manufacturing the semiconductor memory device
SAMSUNG ELECTRONICS CO LTD30 citations92
US7125774B2Oct 24, 2006
Method of manufacturing transistor having recessed channel
SAMSUNG ELECTRONICS CO LTD28 citations92
US6010940AJan 4, 2000
Methods for fabricating CVD TiN barrier layers for capacitor structures
SAMSUNG ELECTRONICS CO LTD37 citations92
US5742472AApr 21, 1998
Stacked capacitors for integrated circuit devices and related methods
SAMSUNG ELECTRONICS CO LTD25 citations92
US6964922B2Nov 15, 2005
Methods for forming metal interconnections for semiconductor devices having multiple metal depositions
SAMSUNG ELECTRONICS CO LTD13 citations84
US6607654B2Aug 19, 2003
Copper-plating elecrolyte containing polyvinylpyrrolidone and method for forming a copper interconnect
SAMSUNG ELECTRONICS CO LTD15 citations84
US7563677B2Jul 21, 2009
Recessed gate electrode and method of forming the same and semiconductor device having the recessed gate electrode and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD11 citations82
US7741222B2Jun 22, 2010
Etch stop structure and method of manufacture, and semiconductor device and method of manufacture
SAMSUNG ELECTRONICS CO LTD17 citations81
US6623798B2Sep 23, 2003
Chemical vapor deposition method for depositing silicide and apparatus for performing the same
SAMSUNG ELECTRONICS CO LTD13 citations80
US6747354B2Jun 8, 2004
Semiconductor devices having multilevel interconnections and methods for manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations74
US6399457B2Jun 4, 2002
Semiconductor device having capacitor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations74
US7410869B2Aug 12, 2008
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations73
US6673718B1Jan 6, 2004
Methods for forming aluminum metal wirings
SAMSUNG ELECTRONICS CO LTD12 citations73
US6905960B2Jun 14, 2005
Method of forming a contact in a semiconductor device
SAMSUNG ELECTRONICS CO LTD9 citations72
US6372616B1Apr 16, 2002
Method of manufacturing an electrical interconnection of a semiconductor device using an erosion protecting plug in a contact hole of interlayer dielectric layer
SAMSUNG ELECTRONICS CO LTD13 citations68
US8053374B2Nov 8, 2011
Method of manufacturing a metal wiring structure
SAMSUNG ELECTRONICS CO LTD3 citations63
US7524724B2Apr 28, 2009
Method of forming titanium nitride layer and method of fabricating capacitor using the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7442607B2Oct 28, 2008
Method of manufacturing transistor having recessed channel
SAMSUNG ELECTRONICS CO LTD4 citations63
US7364967B2Apr 29, 2008
Methods of forming storage capacitors for semiconductor devices
SAMSUNG ELECTRONICS CO LTD6 citations63
US7311109B2Dec 25, 2007
Method for cleaning a processing chamber and method for manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations62
US7119392B2Oct 10, 2006
Storage electrode of a semiconductor device and method of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7135407B2Nov 14, 2006
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations60
US6774029B2Aug 10, 2004
Method for forming a conductive film and a conductive pattern of a semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations60
US6913979B2Jul 5, 2005
Method of manufacturing a metal oxide semiconductor transistor
SAMSUNG ELECTRONICS CO LTD2 citations59
US7238585B2Jul 3, 2007
Method of forming a storage electrode of a semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7037828B2May 2, 2006
Semiconductor device having a capping layer including cobalt and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US6261890B1Jul 17, 2001
Semiconductor device having capacitor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7119029B2Oct 10, 2006
Method of oxidizing a silicon substrate and method of forming an oxide layer using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7008844B2Mar 7, 2006
Method of forming a gate of a non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations49
US7122468B2Oct 17, 2006
Methods of fabricating integrated circuit conductive contact structures including grooves
SAMSUNG ELECTRONICS CO LTD0 citations39